SIHFD9210 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFD9210
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 0.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 54 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Encapsulados: HVMDIP
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SIHFD9210 datasheet
..1. Size:1552K vishay
irfd9210 sihfd9210.pdf 
IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.9 COMPLIANT End Stackable Qgs (nC) 2.1 P-Channel Qgd (nC) 3.9 Fast Switching Configuration Single Ease of Paralleling S
..2. Size:1553K vishay
irfd9210pbf sihfd9210.pdf
IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.9 COMPLIANT End Stackable Qgs (nC) 2.1 P-Channel Qgd (nC) 3.9 Fast Switching Configuration Single Ease of Paralleling S
7.1. Size:1675K vishay
irfd9220pbf sihfd9220.pdf
IRFD9220, SiHFD9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.5 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 15 End Stackable Qgs (nC) 3.2 P-Channel Qgd (nC) 8.4 Fast Switching Configuration Single Ease of Para
7.2. Size:1658K vishay
irfd9220 sihfd9220.pdf
IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.5 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 15 End Stackable Qgs (nC) 3.2 P-Channel Qgd (nC) 8.4 Fast Switching Configuration Single Ease of Paralleling S
8.1. Size:2027K vishay
irfd9120 sihfd9120.pdf
IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature Fast Switchin
8.2. Size:1751K vishay
irfd9014pbf sihfd9014.pdf
IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin
8.3. Size:1639K vishay
irfd9110 sihfd9110.pdf
IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.7 COMPLIANT End Stackable Qgs (nC) 2.2 P-Channel Qgd (nC) 4.1 175 C Operating Temperature Configuration Single Fast Switchin
8.4. Size:1688K vishay
irfd9024 sihfd9024.pdf
IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.28 For Automatic Insertion RoHS* Qg (Max.) (nC) 19 COMPLIANT End Stackable Qgs (nC) 5.4 P-Channel Qgd (nC) 11 Fast Switching Configuration Single 175 C Operating Temperature
8.5. Size:131K vishay
irfd9010pbf sihfd9010.pdf
IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
8.6. Size:129K vishay
sihfd9010 irfd9010.pdf
IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
8.7. Size:2028K vishay
irfd9120pbf sihfd9120.pdf
IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature Fast Switchin
8.8. Size:1640K vishay
irfd9110pbf sihfd9110.pdf
IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.7 COMPLIANT End Stackable Qgs (nC) 2.2 P-Channel Qgd (nC) 4.1 175 C Operating Temperature Configuration Single Fast Switchin
8.9. Size:1750K vishay
irfd9014 sihfd9014.pdf
IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin
8.10. Size:1690K vishay
irfd9024pbf sihfd9024.pdf
IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.28 For Automatic Insertion RoHS* Qg (Max.) (nC) 19 COMPLIANT End Stackable Qgs (nC) 5.4 P-Channel Qgd (nC) 11 Fast Switching Configuration Single 175 C Operating Temperature
8.11. Size:1875K infineon
irfd9120 sihfd9120.pdf
IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature S Fast Switc
Otros transistores... SIHFD310, SIHFD320, SIHFD420, SIHFD9010, SIHFD9014, SIHFD9024, SIHFD9110, SIHFD9120, IRF1407, SIHFD9220, SIHFDC20, SIHFI510G, SIHFI520G, SIHFI530G, SIHFI540G, SIHFI614G, SIHFI620G
