SIHFIBF20G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFIBF20G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 38 nC
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 55 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
Paquete / Cubierta: TO-220FP
Búsqueda de reemplazo de MOSFET SIHFIBF20G
SIHFIBF20G Datasheet (PDF)
irfibf20g sihfibf20g.pdf
IRFIBF20G, SiHFIBF20GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 8.0RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 4.7 Low Thermal ResistanceQgd (nC) 21 Lead (Pb)-free AvailableConfiguration SingleDESCRIPT
sihfibf20g.pdf
IRFIBF20G, SiHFIBF20GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 8.0RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 4.7 Low Thermal ResistanceQgd (nC) 21 Lead (Pb)-free AvailableConfiguration SingleDESCRIPT
sihfibf30g.pdf
IRFIBF30G, SiHFIBF30GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.7RoHS*f = 60 Hz)Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 42 Low Thermal ResistanceConfiguration Sin
irfibf30g sihfibf30g.pdf
IRFIBF30G, SiHFIBF30GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.7RoHS*f = 60 Hz)Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 42 Low Thermal ResistanceConfiguration Sin
sihfibc40glc.pdf
IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati
irfib7n50a sihfib7n50a.pdf
IRFIB7N50A, SiHFIB7N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTRuggednessQg (Max.) (nC) 52 Fully Characterized Capacitance andQgs (nC) 13Avalanche Voltage and CurrentQgd (nC) 18 E
sihfibc40g.pdf
IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing
irfibe20g sihfibe20g.pdf
IRFIBE20G, SiHFIBE20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 6.5f = 60 Hz)RoHS*Qg (Max.) (nC) 38COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 21 Low Thermal ResistanceConfiguration
irfibe30g sihfibe30g.pdf
IRFIBE30G, SiHFIBE30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 78COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.6 Dynamic dV/dt RatingQgd (nC) 45 Low Thermal ResistanceConfiguration
sihfibc20g.pdf
IRFIBC20G, SiHFIBC20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 4.4f = 60 Hz)RoHS*Qg (Max.) (nC) 18COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 8.9 Low Thermal ResistanceConfiguration
irfibc20g sihfibc20g.pdf
IRFIBC20G, SiHFIBC20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 4.4f = 60 Hz)RoHS*Qg (Max.) (nC) 18COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 8.9 Low Thermal ResistanceConfiguration
sihfibe30g.pdf
IRFIBE30G, SiHFIBE30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 78COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.6 Dynamic dV/dt RatingQgd (nC) 45 Low Thermal ResistanceConfiguration
irfib6n60a sihfib6n60a.pdf
IRFIB6N60A, SiHFIB6N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 49COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfi
sihfibe20g.pdf
IRFIBE20G, SiHFIBE20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 6.5f = 60 Hz)RoHS*Qg (Max.) (nC) 38COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 21 Low Thermal ResistanceConfiguration
sihfib5n65a.pdf
IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19
irfibc40glc sihfibc40glc.pdf
IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati
sihfib6n60a.pdf
IRFIB6N60A, SiHFIB6N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 49COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfi
irfibc40g sihfibc40g.pdf
IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing
irfibc30g sihfibc30g.pdf
IRFIBC30G, SiHFIBC30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.2f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 31 Dynamic dV/dt RatingQgs (nC) 4.6 Low Thermal ResistanceQgd (nC) 17 Lead (Pb)-
irfib5n65a sihfib5n65a.pdf
IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19
sihfib7n50a.pdf
IRFIB7N50A, SiHFIB7N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTRuggednessQg (Max.) (nC) 52 Fully Characterized Capacitance andQgs (nC) 13Avalanche Voltage and CurrentQgd (nC) 18 E
sihfibc30g.pdf
IRFIBC30G, SiHFIBC30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.2f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 31 Dynamic dV/dt RatingQgs (nC) 4.6 Low Thermal ResistanceQgd (nC) 17 Lead (Pb)-
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918