SIHFIZ34G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFIZ34G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 600 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: TO-220FP
Búsqueda de reemplazo de SIHFIZ34G MOSFET
SIHFIZ34G Datasheet (PDF)
sihfiz34g.pdf
IRFIZ34G, SiHFIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.050f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 46 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 22 Low T
irfiz34g sihfiz34g.pdf
IRFIZ34G, SiHFIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.050f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 46 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 22 Low T
sihfiz44g.pdf
IRFIZ44G, SiHFIZ44GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.028f = 60 Hz) RoHS*Qg (Max.) (nC) 95COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfigurat
irfiz14g sihfiz14g.pdf
IRFIZ14G, SiHFIZ14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.20RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.1 175 C Operating TemperatureQgd (nC) 5.8 Dynamic dv/dt RatingConfigur
Otros transistores... SIHFIBC40G , SIHFIBC40GLC , SIHFIBE20G , SIHFIBE30G , SIHFIBF20G , SIHFIBF30G , SIHFIZ14G , SIHFIZ24G , IRF540 , SIHFIZ44G , SIHFIZ48G , SIHFL014 , SIHFL110 , SIHFL210 , SIHFL214 , SIHFL9014 , SIHFL9110 .
History: IXTA20N65X
History: IXTA20N65X
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