SIHFL110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFL110
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 8.3 nC
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 81 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de MOSFET SIHFL110
SIHFL110 Datasheet (PDF)
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IRFL110, SiHFL110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.54 Available in Tape and ReelQg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.3 Fast SwitchingQgd (nC) 3.8 Ease of Paralleling Simple Drive R
sihfl110.pdf
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IRFL014, SiHFL014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) ()VGS = 10 V 0.20 Surface Mount Available in Tape and ReelQg (Max.) (nC) 11 Dynamic dV/dt RatingQgs (nC) 3.1 Fast SwitchingQgd (nC) 5.8 Ease of ParallelingConfiguration Single Simple Drive Requirements
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IRFL9110, SiHFL9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100 Definition Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and ReelQg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche RatedQgd (nC) 4.1 P-Channel Fast SwitchingConfiguration Single
sihfl014.pdf
IRFL014, SiHFL014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) ()VGS = 10 V 0.20 Surface Mount Available in Tape and ReelQg (Max.) (nC) 11 Dynamic dV/dt RatingQgs (nC) 3.1 Fast SwitchingQgd (nC) 5.8 Ease of ParallelingConfiguration Single Simple Drive Requirements
sihfl214.pdf
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sihfl9014.pdf
IRFL9014, SiHFL9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and ReelQg (Max.) (nC) 12 Dynamic dV/dt RatingQgs (nC) 3.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 5.1 Fast SwitchingConfiguration Single
sihfl9110.pdf
IRFL9110, SiHFL9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100 Definition Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and ReelQg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche RatedQgd (nC) 4.1 P-Channel Fast SwitchingConfiguration Single
sihfl210.pdf
IRFL210, SiHFL210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 1.5 Surface MountQg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Parallelin
irfl9014 sihfl9014.pdf
IRFL9014, SiHFL9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and ReelQg (Max.) (nC) 12 Dynamic dV/dt RatingQgs (nC) 3.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 5.1 Fast SwitchingConfiguration Single
irfl214 sihfl214.pdf
IRFL214, SiHFL214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250DefinitionRDS(on) ()VGS = 10 V 2.0 Surface MountQg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Parallelin
irfl210 sihfl210.pdf
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