IRF7706GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7706GPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 48 nC
   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 339 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TSSOP-8

Búsqueda de reemplazo de MOSFET IRF7706GPBF

IRF7706GPBF Datasheet (PDF)

..1. Size:234K international rectifier
irf7706gpbf.pdf

PD-96143AIRF7706GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package -30V 22m@VGS = -10V -7.0Al Low Profile (

7.1. Size:152K international rectifier
irf7706.pdf

PD -94003IRF7706HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -30V 22m@VGS = -10V -7.0A Very Small SOIC Package36m@VGS = -4.5V -5.6A Low Profile (

7.2. Size:238K international rectifier
irf7706pbf.pdf

PD-96023AIRF7706PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -30V 22m@VGS = -10V -7.0Al Very Small SOIC Package36m@VGS = -4.5V -5.6Al Low Profile (

8.1. Size:141K international rectifier
irf7701.pdf

PD - 93940IRF7701HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET0.011@VGS = -4.5V -10A Very Small SOIC Package-12V 0.015@VGS = -2.5V -8.5A Low Profile (

8.2. Size:234K international rectifier
irf7705gpbf.pdf

PD- 96142AIRF7705GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max (mW) IDl Very Small SOIC Package-30V 18 @VGS = -10V -8.0Al Low Profile (

8.3. Size:234K international rectifier
irf7705pbf.pdf

PD-96022AIRF7705PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 18 @VGS = -10V -8.0Al Very Small SOIC Package 30 @VGS = -4.5V -6.0Al Low Profile (

8.4. Size:193K international rectifier
irf7704.pdf

PD- 94160IRF7704HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-40V 46@VGS = -10V -4.6A Very Small SOIC Package74@VGS = -4.5V -3.7A Low Profile (

8.5. Size:146K international rectifier
irf7705.pdf

PD - 94001AIRF7705HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-30V 18 @VGS = -10V -8.0A Very Small SOIC Package 30 @VGS = -4.5V -6.0A Low Profile (

8.6. Size:138K international rectifier
irf7702.pdf

PD - 93849CPROVISIONALIRF7702HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID -1.8V Rated0.014@VGS = -4.5V -8.0A P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0A Very Small SOIC Package0.027@VGS = -1.8V -5.8A Low Profile (

8.7. Size:210K international rectifier
irf7703.pdf

PD - 94221 BIRF7703HEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 28@VGS = -10V -6.0Al Very Small SOIC Package45@VGS = -4.5V -4.8Al Low Profile (

8.8. Size:236K international rectifier
irf7701gpbf.pdf

PD - 96146AIRF7701GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFET VDSS RDS(on) max IDl Very Small SOIC Package0.011@VGS = -4.5V -10Al Low Profile (

8.9. Size:151K international rectifier
irf7707.pdf

PD -93996IRF7707HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -20V 22m@VGS = -4.5V -7.0A Very Small SOIC Package33m@VGS = -2.5V -6.0A Low Profile (

8.10. Size:227K international rectifier
irf7702gpbf.pdf

PD- 96147IRF7702GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl -1.8V Rated0.014@VGS = -4.5V -8.0Al P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0Al Very Small SOIC Package0.027@VGS = -1.8V -5.8Al Low Profile (

8.11. Size:184K international rectifier
irf7702pbf.pdf

PD-96027IRF7702PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl -1.8V Rated0.014@VGS = -4.5V -8.0Al P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0Al Very Small SOIC Package0.027@VGS = -1.8V -5.8Al Low Profile (

8.12. Size:237K international rectifier
irf7703pbf.pdf

PD-96026AIRF7703PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 28@VGS = -10V -6.0Al Very Small SOIC Package45@VGS = -4.5V -4.8Al Low Profile (

8.13. Size:241K international rectifier
irf7700gpbf.pdf

PD - 96155AIRF7700GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-20V 0.015@VGS = -4.5V -8.6Al Very Small SOIC Package0.024@VGS = -2.5V -7.3Al Low Profile (

8.14. Size:149K international rectifier
irf7700.pdf

PD - 93894AIRF7700HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-20V 0.015@VGS = -4.5V -8.6A Very Small SOIC Package0.024@VGS = -2.5V -7.3A Low Profile (

8.15. Size:237K international rectifier
irf7703gpbf.pdf

PD- 96148AIRF7703GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max (mW) IDl Very Small SOIC Package-40V 28@VGS = -10V -6.0Al Low Profile (

8.16. Size:244K international rectifier
irf7704pbf.pdf

PD- 96025AIRF7704PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 46@VGS = -10V -4.6Al Very Small SOIC Package74@VGS = -4.5V -3.7Al Low Profile (

8.17. Size:245K international rectifier
irf7704gpbf.pdf

PD-96149IRF7704GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 46@VGS = -10V -4.6Al Very Small SOIC Package74@VGS = -4.5V -3.7Al Low Profile (

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