IRF7751GPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7751GPBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 16 nS
Cossⓘ - Capacitancia de salida: 227 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
Encapsulados: TSSOP-8
Búsqueda de reemplazo de IRF7751GPBF MOSFET
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IRF7751GPBF datasheet
..1. Size:235K international rectifier
irf7751gpbf.pdf 
PD - 96145A IRF7751GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l Dual P-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package -30V 35m @VGS = -10V -4.5A l Low Profile (
6.1. Size:2103K cn vbsemi
irf7751gtr.pdf
IRF7751GTR www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2 - 30 RoHS 0.055 at VGS = - 4.5 V - 4.2 COMPLIANT APPLICATIONS Load Switch Battery Switch S1 S2 TSSOP-8 G1 G2 D1 1 D2 8 S1 2 S2 7 S1 3 S2 6 G1 4 G2 5 Top View D1 D2 P-Chan
7.1. Size:162K international rectifier
irf7751.pdf
PD - 94002 IRF7751 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual P-Channel MOSFET -30V 35m @VGS = -10V -4.5A Very Small SOIC Package 55m @VGS = -4.5V -3.8A Low Profile (
8.1. Size:228K 1
irf7752g.pdf
PD- 96151A IRF7752GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l Dual N-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package 30V 0.030@VGS = 10V 4.6A l Low Profile (
8.2. Size:226K 1
irf7750g.pdf
PD-96144A IRF7750GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package VDSS = -20V l Low Profile (
8.3. Size:311K international rectifier
irf7759l2tr1pbf irf7759l2trpbf.pdf
PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF DirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260 C Reflow) l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket 75V min 20V max 1.8m @ 10V l Optimized for Synchronous Rectification Qg tot Qgd Vgs(th) l Low Cond
8.4. Size:117K international rectifier
irf7752.pdf
PD -94030A IRF7752 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual N-Channel MOSFET 30V 0.030@VGS = 10V 4.6A Very Small SOIC Package 0.036@VGS = 4.5V 3.9A Low Profile (
8.5. Size:245K international rectifier
auirf7759l2.pdf
PD - 96426 AUTOMOTIVE GRADE AUIRF7759L2TR AUIRF7759L2TR1 Advanced Process Technology Automotive DirectFET Power MOSFET Optimized for Automotive Motor Drive, DC-DC and V(BR)DSS 75V other Heavy Load Applications Exceptionally Small Footprint and Low Profile RDS(on) typ. 1.8m High Power Density max. 2.3m Low Parasitic Parameters Dual Sided Cooling
8.6. Size:144K international rectifier
irf7754.pdf
PD - 94224 IRF7754 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 25m @VGS = -4.5V -5.4A Very Small SOIC Package 34m @VGS = -2.5V -4.6A Low Profile (
8.7. Size:238K international rectifier
irf7756.pdf
PD -94159 IRF7756 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V 4.3A Very Small SOIC Package 0.058@VGS = -2.5V 3.4A Low Profile (
8.8. Size:234K international rectifier
irf7755gpbf.pdf
PD- 96150A IRF7755GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l Dual P-Channel MOSFET -20V 51m @VGS = -4.5V -3.7A l Very Small SOIC Package 86m @VGS = -2.5V -2.8A l Low Profile (
8.9. Size:236K international rectifier
irf7754gpbf.pdf
PD- 96152A IRF7754GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 25m @VGS = -4.5V -5.4A l Very Small SOIC Package 34m @VGS = -2.5V -4.6A l Low Profile (
8.10. Size:236K international rectifier
irf7756gpbf.pdf
PD- 96153A IRF7756GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V -4.3A l Very Small SOIC Package 0.058@VGS = -2.5V -3.4A l Low Profile (
8.11. Size:249K international rectifier
irf7755.pdf
PD -93995A IRF7755 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID Dual P-Channel MOSFET -20V 51m @VGS = -4.5V -3.7A Very Small SOIC Package 86m @VGS = -2.5V -2.8A Low Profile (
8.12. Size:110K international rectifier
irf7750.pdf
PD - 93848A IRF7750 HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET VDSS = -20V Very Small SOIC Package Low Profile (
8.13. Size:132K international rectifier
irf7757.pdf
PD - 94174 IRF7757 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) Dual N-Channel MOSFET 20V 35@VGS = 4.5V 4.8A Very Small SOIC Package 40@VGS = 2.5V 3.8A Low Profile (
8.14. Size:269K international rectifier
irf7759l2pbf.pdf
IRF7759L2PbF DirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260 C Reflow) l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket 75V min 20V max 1.8m @ 10V l Optimized for Synchronous Rectification Qg tot Qgd Vgs(th) l Low Conduction Losses 200nC 62nC 3.0V
8.15. Size:441K infineon
auirf7759l2tr.pdf
AUTOMOTIVE GRADE AUIRF7759L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 75V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 1.8m Exceptionally Small Footprint and Low Profile max. 2.3m High Power Density ID (Silicon Limited) 160A Low Parasitic Parameters Qg (typi
Otros transistores... IRF7707, IRF7726PBF, IRF7739L1, IRF7739L2, IRF7748L1, IRF7749L1, IRF7749L2TR1PBF, IRF7749L2TRPBF, AON7410, IRF7754GPBF, IRF7755GPBF, IRF7756GPBF, IRF7759L2TR1PBF, IRF7759L2TRPBF, IRF7769L1, IRF7769L2TR1PBF, IRF7769L2TRPBF
