IRF7805ZPBF-1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7805ZPBF-1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm

Encapsulados: SO-8

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IRF7805ZPBF-1 datasheet

 3.1. Size:270K  international rectifier
 irf7805zpbf.pdf pdf_icon

IRF7805ZPBF-1

PD - 96011A IRF7805ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A l Lead-Free A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Vol

 6.1. Size:270K  international rectifier
 irf7805z.pdf pdf_icon

IRF7805ZPBF-1

PD - 94635B IRF7805Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Curr

 6.2. Size:289K  international rectifier
 irf7805zgpbf.pdf pdf_icon

IRF7805ZPBF-1

PD - 96253 IRF7805ZGPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A l Lead-Free A 1 8 S D l Halogen-Free 2 7 S D 3 6 Benefits S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 Top View l

 6.3. Size:2271K  kexin
 irf7805z.pdf pdf_icon

IRF7805ZPBF-1

SMD Type MOSFET N-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) Features SOP-8 VDS (V) = 30V ID = 16 A (VGS = 10V) RDS(ON) 6.8m (VGS = 10V) A HEXFET Power MOSFET A 1 8 1.50 0.15 S D 2 7 S D 3 6 S D 4 5 G D Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TA

MOSTRAR MÁS

Otros transistores... IRF7779L2TRPBF, IRF7799L2TR1PBF, IRF7799L2TRPBF, IRF7805PBF, IRF7805PBF-1, IRF7805QPBF, IRF7805ZGPBF, IRF7805ZPBF, 2SK3568, IRF7807APBF, IRF7807D1PBF, IRF7807D2PBF, IRF7807PBF-1, IRF7807VD1PBF, IRF7807VD1PBF-1, IRF7807VD2PBF, IRF7807VPBF