IRF7807VD2PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7807VD2PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1.2 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SO-8

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IRF7807VD2PBF datasheet

 4.1. Size:115K  international rectifier
 irf7807vd2.pdf pdf_icon

IRF7807VD2PBF

PD-94079 IRF7807VD2 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D Low Conduction Losses 4 5 Low Switching Losses G K/D D Low Vf Schottky Rectifier Top View Description SO-8 The FETKY family of Co-Pack H

 5.1. Size:117K  international rectifier
 irf7807vd1.pdf pdf_icon

IRF7807VD2PBF

PD-94078 IRF7807VD1 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D Low Conduction Losses 4 5 Low Switching Losses G K/D D Low Vf Schottky Rectifier Top View Description SO-8 The FETKY family of Co-Pack H

 6.1. Size:213K  international rectifier
 irf7807vtrpbf-1.pdf pdf_icon

IRF7807VD2PBF

IRF7807VTRPbF-1 HEXFET Power MOSFET VDS 30 V A 1 8 S D RDS(on) max 25 m 2 7 (@V = 4.5V) S D GS Qg (typical) 9.5 nC 3 6 S D ID 4 5 8.3 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen

 6.2. Size:159K  international rectifier
 irf7807v.pdf pdf_icon

IRF7807VD2PBF

PD-94108 IRF7807V N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses A Low Switching Losses 1 8 S D 2 7 Description S D This new device employs advanced HEXFET Power 3 6 S D MOSFET technology to achieve an unprecedented 4 5 balance of on-resistance and gate charge. The G D reduction of conduction and switching losses m

MOSTRAR MÁS

Otros transistores... IRF7805ZPBF, IRF7805ZPBF-1, IRF7807APBF, IRF7807D1PBF, IRF7807D2PBF, IRF7807PBF-1, IRF7807VD1PBF, IRF7807VD1PBF-1, 20N50, IRF7807VPBF, IRF7807VPBF-1, IRF7807ZPBF, IRF7809A, IRF7809AVPBF, IRF7809AVPBF-1, IRF7811A, IRF7811APBF