IRL621 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL621
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 42 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Id|ⓘ - Corriente continua
de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de IRL621 MOSFET
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IRL621 datasheet
9.2. Size:1412K international rectifier
irl620spbf.pdf 
PD- 95591 IRL620SPbF Lead-Free 07/21/04 Document Number 91302 www.vishay.com 1 IRL620SPbF Document Number 91302 www.vishay.com 2 IRL620SPbF Document Number 91302 www.vishay.com 3 IRL620SPbF Document Number 91302 www.vishay.com 4 IRL620SPbF Document Number 91302 www.vishay.com 5 IRL620SPbF Document Number 91302 www.vishay.com 6 IRL620SPbF Peak Diode Recovery
9.3. Size:260K international rectifier
irl6297sdpbf.pdf 
IRL6297SDPbF DirectFET Dual N-Channel Power MOSFET Typical values (unless otherwise specified) Applications VDSS VGS RDS(on) RDS(on) l Charge and Discharge Switch for Battery Application l Isolation Switch for Input Power or Battery Application 20V max 12V max 3.8m @4.5V 5.4m @2.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits 27nC 9.5nC 1.4nC 21nC 15nC 0.80V l
9.4. Size:334K international rectifier
irl620s.pdf 
PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel VDSS = 200V Dynamic dv/dt Rating Repetitive Avalanche Rated RDS(on) = 0.80 Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V Fast Switching ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized
9.5. Size:287K international rectifier
irl620.pdf 
PD -9.1217 IRL620 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 200V Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V RDS(on) = 0.80 Fast Switching Ease of paralleling Simple Drive Requirements ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rug
9.6. Size:510K international rectifier
irl6283m.pdf 
StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications Typical values (unless otherwise specified) ORing, eFuse, and high current load switch VDSS VGS Vgs(th) RDS(on) RDS(on) RDS(on) Load switch for battery 20V max 12V max 0.8V 0.50m @10V 0.65m @4.5V 1.1m @2.5V application Inverter switches for DC motor application S S
9.7. Size:1359K international rectifier
irl620pbf.pdf 
PD- 95670 IRL620PbF Lead-Free 8/2/04 Document Number 91301 www.vishay.com 1 IRL620PbF Document Number 91301 www.vishay.com 2 IRL620PbF Document Number 91301 www.vishay.com 3 IRL620PbF Document Number 91301 www.vishay.com 4 IRL620PbF Document Number 91301 www.vishay.com 5 IRL620PbF Document Number 91301 www.vishay.com 6 IRL620PbF Document Number 91301 www.v
9.9. Size:2134K vishay
irl620s sihl620s.pdf 
IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount VDS (V) 200 Available Available in Tape and Reel RDS(on) ( )VGS = 10 V 0.80 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 16 Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 V Configuration Singl
9.10. Size:2119K vishay
irl620 sihl620.pdf 
IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.80 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.7 Fast Switching Qgd (nC) 9.6 Ease of paralleling Configuration Single
9.11. Size:1464K vishay
irl620spbf sihl620s.pdf 
IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
9.12. Size:2122K vishay
irl620pbf sihl620.pdf 
IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.80 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.7 Fast Switching Qgd (nC) 9.6 Ease of paralleling Configuration Single
9.13. Size:1439K vishay
irl620s sihl620s 2.pdf 
IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
Otros transistores... IRL541, IRL5602S, IRL610, IRL610A, IRL611, IRL620, IRL620A, IRL620S, 75N75, IRL630, IRL630A, IRL630S, IRL631, IRL640, IRL640A, IRL640S, IRL641