IRF7820PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7820PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.2 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de IRF7820PBF MOSFET
IRF7820PBF Datasheet (PDF)
irf7820pbf.pdf

IRF7820PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg (typ.)l Synchronous MOSFET for Notebook200V 78m@VGS = 10V 29nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 10V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Curr
irf7821pbf-1.pdf

IRF7821PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 9.1 m2 7S D(@V = 10V)GS3 6Qg (typical) 9.3 nCS DID 4 5G D13.6 A(@T = 25C)ASO-8Top ViewApplicationsl High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking &Computing Systems.Features BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor Comp
irf7828pbf.pdf

PD-95214AIRF7828PbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D Lead-Free2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance an
irf7822.pdf

PD - 94279IRF7822HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D2 7S DDescription 3 6S DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The
Otros transistores... IRF7809AVPBF-1 , IRF7811A , IRF7811APBF , IRF7811AVPBF , IRF7811AVPBF-1 , IRF7811WPBF , IRF7811W , IRF7815PBF , RU7088R , IRF7821GPBF , IRF7821PBF , IRF7821PBF-1 , IRF7822PBF , IRF7822 , IRF7828PBF , IRF7831PBF , IRF7832PBF .
History: FDFMA3N109 | IXTT30N50P | CMPDM7002AG | AON6362 | CSD86330Q3D | PJU1NA60 | AP4618CDT
History: FDFMA3N109 | IXTT30N50P | CMPDM7002AG | AON6362 | CSD86330Q3D | PJU1NA60 | AP4618CDT



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