IRF7820PBF Datasheet. Equivalente

 ..1. Size:214K  international rectifier
 irf7820pbf.pdf

IRF7820PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l Synchronous MOSFET for Notebook 200V 78m @VGS = 10V 29nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 10V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage and Curr

 8.1. Size:255K  international rectifier
 irf7821pbf-1.pdf

IRF7821PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 9.1 m 2 7 S D (@V = 10V) GS 3 6 Qg (typical) 9.3 nC S D ID 4 5 G D 13.6 A (@T = 25 C) A SO-8 Top View Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Comp

 8.2. Size:580K  international rectifier
 irf7828pbf.pdf

PD-95214A IRF7828PbF HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D Lead-Free 2 7 S D 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance an

 8.3. Size:69K  international rectifier
 irf7822.pdf

PD - 94279 IRF7822 HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D 2 7 S D Description 3 6 S D This new device employs advanced HEXFET Power 4 5 G D MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The

 8.4. Size:206K  international rectifier
 irf7821.pdf

PD - 94579A IRF7821 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Current

 8.5. Size:288K  international rectifier
 irf7821gpbf.pdf

PD - 96248 IRF7821GPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nC Synchronous Buck Converter for Applications in Networking & Computing Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage and Current SO-8 T

 8.6. Size:143K  international rectifier
 irf7822pbf.pdf

PD - 95024 IRF7822PbF HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D Lead-Free 2 7 S D 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance a

 8.7. Size:285K  international rectifier
 irf7821pbf.pdf

PD - 95213A IRF7821PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nC Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage and Cur

 8.8. Size:479K  international rectifier
 irf7828.pdf

PD - 94602 IRF7828 HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D 2 7 S D Description 3 6 S D This new device employs advanced HEXFET Power 4 5 G D MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The