IRL630A Todos los transistores

 ..1. Size:911K  samsung
 irl630a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

 8.1. Size:168K  international rectifier
 irl630s.pdf

PD - 9.1254 IRL630S HEXFET Power MOSFET Surface Mount Available in Tape & Reel VDSS = 200V Dynamic dv/dt Rating Repetitive Avalanche Rated RDS(on) = 0.40 Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V 150 C Operating Temperature ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switc

 8.2. Size:1360K  international rectifier
 irl630pbf.pdf

PD- 95756 IRL630PbF Lead-Free 8/24/04 Document Number 91303 www.vishay.com 1 IRL630PbF Document Number 91303 www.vishay.com 2 IRL630PbF Document Number 91303 www.vishay.com 3 IRL630PbF Document Number 91303 www.vishay.com 4 IRL630PbF Document Number 91303 www.vishay.com 5 IRL630PbF Document Number 91303 www.vishay.com 6 IRL630PbF Document Number 91303 www.

 8.3. Size:150K  international rectifier
 irl630.pdf

PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 200V Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V RDS(on) = 0.40 150 C Operating Temperature Fast Switching Ease of paralleling ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching,

 8.4. Size:2277K  vishay
 irl630 sihl630.pdf

IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5 V 0.40 RoHS* Logic Level Gate Drive COMPLIANT Qg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 5.5 150 C Operating Temperature Qgd (nC) 24 Fast Switching Configuration Sing

 8.5. Size:218K  vishay
 irl630s sihl630s.pdf

IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 5.5 Logic-Level Gate Drive Qgd (nC) 24 RDS(on) Specified at VGS = 4 V a

 8.6. Size:244K  vishay
 irl630spbf sihl630s.pdf

IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 5.5 Logic-Level Gate Drive Qgd (nC) 24 RDS(on) Specified at VGS = 4 V a

 8.7. Size:2205K  vishay
 irl630pbf sihl630.pdf

IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5 V 0.40 RoHS* Logic Level Gate Drive COMPLIANT Qg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 5.5 150 C Operating Temperature Qgd (nC) 24 Fast Switching Configuration Sing