IRF7902PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7902PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1.4 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 6.4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.25 V
   Carga de la puerta (Qg): 4.6 nC
   Tiempo de subida (tr): 8.2 nS
   Conductancia de drenaje-sustrato (Cd): 130 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0226 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET IRF7902PBF

IRF7902PBF Datasheet (PDF)

..1. Size:261K international rectifier
irf7902pbf.pdf

PD - 97194AIRF7902PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,22.6m @VGS = 10V30V Q1 6.4AGraphics Cards, Game Consoles14.4m @VGS = 10VQ2 9.7Aand Set-Top BoxBenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Current l 20V VGS Max. Gate

8.1. Size:320K international rectifier
irf7907pbf.pdf

PD - 97066AIRF7907PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 16.4m @VGS = 10V 9.1AGraphics Cards, Game Consolesand Set-Top BoxQ2 11.8m @VGS = 10V 11ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Rat

8.2. Size:323K international rectifier
irf7905pbf.pdf

PD - 97065BIRF7905PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 21.8m @VGS = 10V 7.8AGraphics Cards, Game Consolesand Set-Top BoxQ2 17.1m @VGS = 10V 8.9ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Ra

8.3. Size:307K international rectifier
irf7904pbf-1.pdf

IRF7904PbF-1HEXFET Power MOSFETVDS 30 VRDS(on) max Q116.2G1 1 8 D1(@V = 10V)GSmRDS(on) max Q2S2 2 7 S1 / D210.8(@V = 10V)GSS2 3 6 S1 / D2Qg (typical) Q1 7.5nCQ Q2 14g (typical) G2 4 5 S1 / D2ID Q1 7.6(@TA = 25C)SO-8AID Q2 11(@TA = 25C)Applicationsl Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers,Graphics Cards,

8.4. Size:255K international rectifier
irf7904pbf.pdf

PD - 96919BIRF7904PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 16.2m @VGS = 10V 7.6AGraphics Cards, Game Consolesand Set-Top BoxQ2 10.8m @VGS = 10V 11ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Rat

8.5. Size:256K international rectifier
irf7901d1.pdf

PD- 93844BIRF7901D1 Co-Pack Dual N-channel HEXFET Power MOSFETDual FETKYand Schottky Diode Ideal for Synchronous Buck DC-DCCo-Packaged Dual MOSFET Plus Schottky DiodeConverters Up to 5A Peak Output Low Conduction LossesDevice Ratings (Max.Values) Low Switching Losses Low Vf Schottky RectifierQ1 Q2and SchottkyQ1Pwr18Source VinVDS 30V 30V

8.6. Size:276K international rectifier
irf7907pbf-1.pdf

IRF7907TRPbF-1HEXFET Power MOSFETV 30 VDSR Q1DS(on) m ax S2 1 8 D216.4(@V = 10V)GSmR Q2DS(on) m ax G2 2 7 D211.8(@V = 10V)GSS1 3 6 D1Q Q1 6.7g (typical) nCQ Q2 14g (typical) G1 4 5 D1I Q1 9.1D(@TA = 25C)SO-8AI Q2 11D(@TA = 25C)Applicationsl Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards,

8.7. Size:320K infineon
irf7907pbf.pdf

8.8. Size:255K infineon
irf7904pbf.pdf

8.9. Size:2423K cn vbsemi
irf7905tr.pdf

IRF7905TRwww.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S

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