IRF7910PBF-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF7910PbF-1HEXFET Power MOSFETVDS 12 V1 8S1 D1RDS(on) max 15 m2 7(@V = 4.5V) G1 D1GSQg (typical) 17 nC 3 6S2 D2ID 4510 A G2 D2(@T = 25C)ASO-8Top ViewApplicationsl High Frequency 3.3V and 5V input Point of-Load Synchronous Buck Converters for Netcom andComputing Applicationsl Power Management for Netcom, Computing and Portable ApplicationsFe

PD - 94419IRF7910HEXFET Power MOSFETVDSS RDS(on) max IDApplications 12V 15m @VGS = 4.5V 10Al High Frequency 3.3V and 5V input Point-of-Load Synchronous Buck Converters forNetcom and Computing Applicationsl Power Management for Netcom, Computing and Portable Applications1 8S1 D12 7G1 D1Benefits3 6l Ultra-Low Gate ImpedanceS2 D2l Very Low RDS(on)45

StrongIRFETIRF7946PbFApplicationsDirectFET Power MOSFETl Brushed Motor drive applicationsVDSS 40Vl BLDC Motor drive applicationsRDS(on) typ. 1.1ml Battery powered circuits max. 1.4ml Half-bridge and full-bridge topologiesID (Silicon Limited) 198Al Synchronous rectifier applicationsl Resonant mode power suppliesID (Package Limited) 90A l OR-ing and redund

PD - 97066AIRF7907PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 16.4m @VGS = 10V 9.1AGraphics Cards, Game Consolesand Set-Top BoxQ2 11.8m @VGS = 10V 11ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Rat

PD - 97065BIRF7905PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 21.8m @VGS = 10V 7.8AGraphics Cards, Game Consolesand Set-Top BoxQ2 17.1m @VGS = 10V 8.9ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Ra

IRF7904PbF-1HEXFET Power MOSFETVDS 30 VRDS(on) max Q116.2G1 1 8 D1(@V = 10V)GSmRDS(on) max Q2S2 2 7 S1 / D210.8(@V = 10V)GSS2 3 6 S1 / D2Qg (typical) Q1 7.5nCQ Q2 14g (typical) G2 4 5 S1 / D2ID Q1 7.6(@TA = 25C)SO-8AID Q2 11(@TA = 25C)Applicationsl Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers,Graphics Cards,

PD - 96919BIRF7904PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 16.2m @VGS = 10V 7.6AGraphics Cards, Game Consolesand Set-Top BoxQ2 10.8m @VGS = 10V 11ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Rat

PD- 93844BIRF7901D1 Co-Pack Dual N-channel HEXFET Power MOSFETDual FETKYand Schottky Diode Ideal for Synchronous Buck DC-DCCo-Packaged Dual MOSFET Plus Schottky DiodeConverters Up to 5A Peak Output Low Conduction LossesDevice Ratings (Max.Values) Low Switching Losses Low Vf Schottky RectifierQ1 Q2and SchottkyQ1Pwr18Source VinVDS 30V 30V

PD - 97194AIRF7902PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,22.6m @VGS = 10V30V Q1 6.4AGraphics Cards, Game Consoles14.4m @VGS = 10VQ2 9.7Aand Set-Top BoxBenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Current l 20V VGS Max. Gate

IRF7907TRPbF-1HEXFET Power MOSFETV 30 VDSR Q1DS(on) m ax S2 1 8 D216.4(@V = 10V)GSmR Q2DS(on) m ax G2 2 7 D211.8(@V = 10V)GSS1 3 6 D1Q Q1 6.7g (typical) nCQ Q2 14g (typical) G1 4 5 D1I Q1 9.1D(@TA = 25C)SO-8AI Q2 11D(@TA = 25C)Applicationsl Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards,

StrongIRFETIRF7946PbFApplicationsDirectFET Power MOSFETl Brushed Motor drive applicationsVDSS 40Vl BLDC Motor drive applicationsRDS(on) typ. 1.1ml Battery powered circuits max. 1.4ml Half-bridge and full-bridge topologiesID (Silicon Limited) 198Al Synchronous rectifier applicationsl Resonant mode power suppliesID (Package Limited) 90A l OR-ing and redund

PD - 97066AIRF7907PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 16.4m @VGS = 10V 9.1AGraphics Cards, Game Consolesand Set-Top BoxQ2 11.8m @VGS = 10V 11ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Rat

PD - 96919BIRF7904PbFHEXFET Power MOSFETApplicationsVDSS IDRDS(on) maxl Dual SO-8 MOSFET for POLConverters in Notebook Computers, Servers,30V Q1 16.2m @VGS = 10V 7.6AGraphics Cards, Game Consolesand Set-Top BoxQ2 10.8m @VGS = 10V 11ABenefitsl Very Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand Currentl 20V VGS Max. Gate Rat

IRF7905TRwww.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S