IRF7946 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7946

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 198 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49 nS

Cossⓘ - Capacitancia de salida: 1046 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm

Encapsulados: DIRECTFET

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IRF7946 datasheet

 ..1. Size:289K  international rectifier
irf7946.pdf pdf_icon

IRF7946

StrongIRFET IRF7946PbF Applications DirectFET Power MOSFET l Brushed Motor drive applications VDSS 40V l BLDC Motor drive applications RDS(on) typ. 1.1m l Battery powered circuits max. 1.4m l Half-bridge and full-bridge topologies ID (Silicon Limited) 198A l Synchronous rectifier applications l Resonant mode power supplies ID (Package Limited) 90A l OR-ing and redund

 0.1. Size:289K  international rectifier
irf7946trpbf.pdf pdf_icon

IRF7946

StrongIRFET IRF7946PbF Applications DirectFET Power MOSFET l Brushed Motor drive applications VDSS 40V l BLDC Motor drive applications RDS(on) typ. 1.1m l Battery powered circuits max. 1.4m l Half-bridge and full-bridge topologies ID (Silicon Limited) 198A l Synchronous rectifier applications l Resonant mode power supplies ID (Package Limited) 90A l OR-ing and redund

 9.1. Size:122K  1
irf7910.pdf pdf_icon

IRF7946

PD - 94419 IRF7910 HEXFET Power MOSFET VDSS RDS(on) max ID Applications 12V 15m @VGS = 4.5V 10A l High Frequency 3.3V and 5V input Point- of-Load Synchronous Buck Converters for Netcom and Computing Applications l Power Management for Netcom, Computing and Portable Applications 1 8 S1 D1 2 7 G1 D1 Benefits 3 6 l Ultra-Low Gate Impedance S2 D2 l Very Low RDS(on) 4 5

 9.2. Size:320K  international rectifier
irf7907pbf.pdf pdf_icon

IRF7946

PD - 97066A IRF7907PbF HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, 30V Q1 16.4m @VGS = 10V 9.1A Graphics Cards, Game Consoles and Set-Top Box Q2 11.8m @VGS = 10V 11A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rat

Otros transistores... IRF7862PBF, IRF7902PBF, IRF7904PBF, IRF7904PBF-1, IRF7905PBF, IRF7907PBF, IRF7907PBF-1, IRF7910PBF-1, 50N06, IRF7E3704, IRF7F3704, IRF7MS2907, IRF7N1405, IRF7NA2907, IRF7NJZ44V, IRF7Y1405CM, IRF7YSZ44VCM