IRF7N1405 Todos los transistores

 

IRF7N1405 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7N1405
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 1290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
   Paquete / Cubierta: SMD-1
 

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IRF7N1405 Datasheet (PDF)

 ..1. Size:196K  international rectifier
 irf7n1405.pdf pdf_icon

IRF7N1405

PD - 94643AHEXFET POWER MOSFET IRF7N1405SURFACE MOUNT (SMD-1) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7N1405 55V 0.0053 55A*Seventh Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingSMD-1techniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa

 9.1. Size:113K  international rectifier
 irf7njz44v.pdf pdf_icon

IRF7N1405

PD - 94433HEXFET POWER MOSFET IRF7NJZ44VSURFACE MOUNT (SMD-0.5)60V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7NJZ44V 60V 0.0165 22A*Seventh Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with t

 9.2. Size:172K  international rectifier
 irf7na2907.pdf pdf_icon

IRF7N1405

PD-94337CHEXFET POWER MOSFET IRF7NA2907SURFACE MOUNT (SMD-2)75V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7NA2907 75V 0.0045 75A*Seventh Generation HEXFET power MOSFETs fromSMD-2International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with then

 9.3. Size:1229K  cn sps
 smirf7n65.pdf pdf_icon

IRF7N1405

SMIRF7N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 7A SMIRF7N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.3(VGS=10V, ID=3.5A) on-state resistance, provide superior s

MOSTRAR MÁS

Otros transistores... IRF7905PBF , IRF7907PBF , IRF7907PBF-1 , IRF7910PBF-1 , IRF7946 , IRF7E3704 , IRF7F3704 , IRF7MS2907 , IRF1404 , IRF7NA2907 , IRF7NJZ44V , IRF7Y1405CM , IRF7YSZ44VCM , IRF8010PBF , IRF8010SPBF , IRF8113GPBF , IRF8113PBF .

History: STF20N95K5 | UTT4815 | SI7619DN | AOLF66413 | IRF7NA2907 | MTP25N05E | SQD50N04-5M0

 

 
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