IRF8113PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF8113PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 17.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 24 nC
Tiempo de subida (tr): 8.9 nS
Conductancia de drenaje-sustrato (Cd): 600 pF
Resistencia entre drenaje y fuente RDS(on): 0.0056 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET IRF8113PBF
IRF8113PBF Datasheet (PDF)
irf8113pbf.pdf
PD - 95138BIRF8113PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook5.6m @VGS = 10V30V 24nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S D2 7Benefits S Dl Very Low RDS(on) at 4.5V VGS 3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltag
irf8113pbf-1.pdf
IRF8113PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 5.62 7S D(@V = 10V)GSm3 6RDS(on) max S D6.8(@V = 4.5V)GS 4 5G DQg (typical) 24 nCSO-8ID Top View17.2 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoH
irf8113.pdf
PD - 94637BIRF8113HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook5.6m:@VGS = 10V30V 24nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S D2 7Benefits S D3l Very Low RDS(on) at 4.5V VGS 6S Dl Low Gate Charge45G Dl Fully Characterized Avalanche Voltage
irf8113gpbf.pdf
PD - 96251IRF8113GPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook5.6m @VGS = 10V30V 24nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8l Lead-Free S D2 7l Halogen-FreeS D3 6S DBenefits4 5G Dl Very Low RDS(on) at 4.5V VGSl Low Gate Charge SO-8Top
irf8113.pdf
PD - 94637AIRF8113HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook5.6m:@VGS = 10V30V 24nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters in NetworkingAA1 8Systems S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge45G Dl Fully Characterized Avalanche Voltage
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
