IRF820B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF820B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 49 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 30 nS
Cossⓘ - Capacitancia de salida: 45 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.6 Ohm
Encapsulados: TO-220
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IRF820B datasheet
8.1. Size:2090K international rectifier
irf820pbf.pdf 
PD - 94979 IRF820PbF Lead-Free 02/03/04 Document Number 91059 www.vishay.com 1 IRF820PbF Document Number 91059 www.vishay.com 2 IRF820PbF Document Number 91059 www.vishay.com 3 IRF820PbF Document Number 91059 www.vishay.com 4 IRF820PbF Document Number 91059 www.vishay.com 5 IRF820PbF Document Number 91059 www.vishay.com 6 IRF820PbF TO-220AB Package Outline
8.2. Size:133K international rectifier
irf820as.pdf
PD- 93774A IRF820AS SMPS MOSFET IRF820AL HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 3.0 2.5A High speed power switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and TO-262 D2Pak Aval
8.3. Size:318K international rectifier
irf820s.pdf
PD - 95548 IRF820SPbF Lead-Free 7/22/04 Document Number 91060 www.vishay.com 1 IRF820SPbF Document Number 91060 www.vishay.com 2 IRF820SPbF Document Number 91060 www.vishay.com 3 IRF820SPbF Document Number 91060 www.vishay.com 4 IRF820SPbF Document Number 91060 www.vishay.com 5 IRF820SPbF Document Number 91060 www.vishay.com 6 IRF820SPbF Peak Diode Recovery
8.4. Size:196K international rectifier
irf820a.pdf
PD - 94978 SMPS MOSFET IRF820APbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 3.0 2.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche
8.6. Size:291K international rectifier
irf820aspbf irf820alpbf.pdf
PD - 95533 IRF820ASPbF SMPS MOSFET IRF820ALPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 3.0 2.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance
8.7. Size:133K international rectifier
irf820al.pdf
PD- 93774A IRF820AS SMPS MOSFET IRF820AL HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 3.0 2.5A High speed power switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and TO-262 D2Pak Aval
8.8. Size:296K st
irf820.pdf
IRF820 N-channel 500V - 2.5 - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS(on) ID IRF820 500V
8.10. Size:917K samsung
irf820a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va
8.11. Size:200K vishay
irf820 sihf820.pdf
IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 13 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC DESCR
8.12. Size:200K vishay
irf820spbf sihf820s.pdf
IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 500 Surface Mount RDS(on) ( )VGS = 10 V 3.0 Available in Tape and Reel Qg (Max.) (nC) 24 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease of Paralleling Simple Drive Re
8.13. Size:174K vishay
irf820l irf820lpbf sihf820l.pdf
IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 500 Available in tape and reel RDS(on) ( )VGS = 10 V 3.0 Available Dynamic dV/dt rating Qg (Max.) (nC) 24 Repetitive avalanche rated Qgs (nC) 3.3 Available Fast switching Qgd (nC) 13 Ease of paralleling Configuration Singl
8.14. Size:204K vishay
irf820aspbf sihf820al sihf820as.pdf
IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (Max.) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 4.3 Ruggedness Qgd (nC) 8.5 Fully Characterize
8.15. Size:204K vishay
irf820a sihf820a.pdf
IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Qg (Max.) (nC) 17 Ruggedness Qgs (nC) 4.3 Fully Characterized Capacitance and Avalanche Voltage and current Qgd (nC) 8.5 Effecti
8.16. Size:201K vishay
irf820pbf sihf820.pdf
IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 13 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC DESCR
8.17. Size:151K infineon
irf820 sihf820.pdf
IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 13 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC DESCR
8.18. Size:229K inchange semiconductor
irf820.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF820 DESCRIPTION Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 3 (Max) DS(on) Fast Switching Speed Simple Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current
8.19. Size:212K inchange semiconductor
irf820fi.pdf
isc N-Channel Mosfet Transistor IRF820FI FEATURES Low R = 2.5 (TYP) DS(on) Lower Input Capacitance Improved Gate Charge Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current , high speed switching Switching mode power supplies DC-DC & DC-AC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a
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