IRL640A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRL640A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 40 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO220

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IRL640A Datasheet (PDF)

..1. Size:226K fairchild semi
irl640a.pdf

IRL640AFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maxim

..2. Size:881K samsung
irl640a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin

..3. Size:892K onsemi
irl640a.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:263K international rectifier
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8.2. Size:247K international rectifier
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8.3. Size:941K international rectifier
irl640pbf.pdf

PD - 94964IRL640PbF Lead-Free01/30/04Document Number: 91305 www.vishay.com1IRL640PbFDocument Number: 91305 www.vishay.com2IRL640PbFDocument Number: 91305 www.vishay.com3IRL640PbFDocument Number: 91305 www.vishay.com4IRL640PbFDocument Number: 91305 www.vishay.com5IRL640PbFDocument Number: 91305 www.vishay.com6IRL640PbFDocument Number: 91305 ww

8.4. Size:986K international rectifier
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PD- 95585IRL640SPbF Lead-Free07/20/04Document Number: 91306 www.vishay.com1IRL640SPbFDocument Number: 91306 www.vishay.com2IRL640SPbFDocument Number: 91306 www.vishay.com3IRL640SPbFDocument Number: 91306 www.vishay.com4IRL640SPbFDocument Number: 91306 www.vishay.com5IRL640SPbFDocument Number: 91306 www.vishay.com6IRL640SPbFPeak Diode Recovery

8.5. Size:1708K vishay
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IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si

8.6. Size:915K vishay
irl640s sihl640s.pdf

IRL640S, SiHL640SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Surface MountRDS(on) ()VGS = 5 V 0.18 Available in Tape and ReelQg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.0 Logic-Level Gate DriveQgd (nC) 38 RDS(on) Specified at VGS = 4 V a

8.7. Size:1705K vishay
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Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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