SIHFPG30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFPG30

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO-247AC

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SIHFPG30 datasheet

 ..1. Size:1740K  vishay
 irfpg30pbf sihfpg30.pdf pdf_icon

SIHFPG30

IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 80 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Complian

 ..2. Size:1733K  vishay
 irfpg30 sihfpg30.pdf pdf_icon

SIHFPG30

IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 80 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Complian

 ..3. Size:1738K  infineon
 irfpg30 sihfpg30.pdf pdf_icon

SIHFPG30

IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 80 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Complian

 8.1. Size:1082K  vishay
 irfpg50 sihfpg50.pdf pdf_icon

SIHFPG30

IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 Isolated Central Mounting Hole Qg (Max.) (nC) 190 Fast Switching Qgs (nC) 23 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/9

MOSTRAR MÁS

Otros transistores... SIHFPC60, SIHFPC60LC, SIHFPE30, SIHFPE40, SIHFPE50, SIHFPF30, SIHFPF40, SIHFPF50, IRFP250, SIHFPG40, SIHFPG50, SIHFPS37N50A, SIHFPS38N60L, SIHFPS40N50L, SIHFPS40N60K, SIHFPS43N50K, SIHFR010