SIHFPS40N60K Todos los transistores

 

SIHFPS40N60K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHFPS40N60K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 570 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 750 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SUPER-247
 

 Búsqueda de reemplazo de SIHFPS40N60K MOSFET

   - Selección ⓘ de transistores por parámetros

 

SIHFPS40N60K Datasheet (PDF)

 ..1. Size:178K  vishay
 irfps40n60k sihfps40n60k.pdf pdf_icon

SIHFPS40N60K

IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current

 ..2. Size:180K  vishay
 irfps40n60k irfps40n60kpbf sihfps40n60k.pdf pdf_icon

SIHFPS40N60K

IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current

 5.1. Size:187K  vishay
 irfps40n50l irfps40n50lpbf sihfps40n50l.pdf pdf_icon

SIHFPS40N60K

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 5.2. Size:185K  vishay
 irfps40n50l sihfps40n50l.pdf pdf_icon

SIHFPS40N60K

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

MOSTRAR MÁS

Otros transistores... SIHFPF40 , SIHFPF50 , SIHFPG30 , SIHFPG40 , SIHFPG50 , SIHFPS37N50A , SIHFPS38N60L , SIHFPS40N50L , IRFZ46N , SIHFPS43N50K , SIHFR010 , SIHFR014 , SIHFR020 , SIHFR024 , SIHFR110 , SIHFR120 , SIHFR1N60A .

History: SQ4949EY | AP2310GK-HF | SQ7414EN | HM4953B | SI4168DY | SQ4961EY

 

 
Back to Top

 


 
.