SIHFR420A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFR420A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 53 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET SIHFR420A
SIHFR420A Datasheet (PDF)
irfr420apbf irfu420apbf sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac
irfr420a irfu420a sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac
irfr420a irfu420a sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and DynamicdV/dt RuggednessQg (Max.) (nC) 17 Fully Characterized Capacitance andQgs (nC) 4.3Avalanche Voltage and CurrentQgd (nC) 8.5
irfr420 irfu420 sihfr420 sihfu420.pdf
IRFR420, IRFU420, SiHFR420, SiHFU420Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt Rating Repetitive Avalanche RatedQg (Max.) (nC) 19 Surface Mount (IRFR420, SiHFR420)Qgs (nC) 3.3 Straight Lead (IRFU420, SiHFU420)Qgd (nC) 13 Available in Tap
irfr420pbf irfr420trpbf irfu420pbf sihfr420 sihfu420.pdf
IRFR420, IRFU420, SiHFR420, SiHFU420www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0 Surface Mount (IRFR420, SiHFR420) Straight Lead (IRFU420, SiHFU420)Qg (Max.) (nC) 19 Available in Tape and ReelQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease
irfr430a irfr430apbf irfu430apbf sihfr430a sihfu430a.pdf
IRFR430A, IRFU430A, SiHFR430A, SiHFU430Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 1.7 Improved Gate, Avalanche and DynamicQg (Max.) (nC) 24dV/dt RuggednessQgs (nC) 6.5 Fully Characterized Capacitance andQgd (nC) 13Avalanche Voltage and Current
irfr430a irfu430a sihfr430a sihfu430a.pdf
IRFR430A, IRFU430A, SiHFR430A, SiHFU430AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.7RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24COMPLIANTRuggednessQgs (nC) 6.5Qgd (nC) 13 Fully Characterized Capacitance and Avalanche Voltage
irfr430a irfu430a sihfr430a sihfu430a.pdf
IRFR430A, IRFU430A, SiHFR430A, SiHFU430Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 1.7 Improved Gate, Avalanche and DynamicQg (Max.) (nC) 24dV/dt RuggednessQgs (nC) 6.5 Fully Characterized Capacitance andQgd (nC) 13Avalanche Voltage and Current
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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