SIHFSL9N60A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFSL9N60A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO-262

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SIHFSL9N60A datasheet

 ..1. Size:194K  vishay
irfsl9n60a sihfsl9n60a.pdf pdf_icon

SIHFSL9N60A

IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 49 Requirement Qgs (nC) 13 Improved Gate, Avalanche and Dynamic Qgd (nC) 20 dV/dt Ruggedness Configuration Single Fully Characterized

 ..2. Size:196K  vishay
irfsl9n60apbf sihfsl9n60a.pdf pdf_icon

SIHFSL9N60A

IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 49 Requirement Qgs (nC) 13 Improved Gate, Avalanche and Dynamic Qgd (nC) 20 dV/dt Ruggedness Configuration Single Fully Characterized

 8.1. Size:305K  vishay
irfsl11n50a sihfsl11n50a.pdf pdf_icon

SIHFSL9N60A

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK

 8.2. Size:307K  vishay
irfsl11n50apbf sihfsl11n50a.pdf pdf_icon

SIHFSL9N60A

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK

Otros transistores... SIHFR9210, SIHFR9214, SIHFR9220, SIHFR9310, SIHFRC20, SIHFS11N50A, SIHFS9N60A, SIHFSL11N50A, IRFZ44N, SIHFU014, SIHFU020, SIHFU024, SIHFU110, SIHFU120, SIHFU1N60A, SIHFU210, SIHFU214