SIHFZ40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFZ40
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 110 nS
Cossⓘ - Capacitancia de salida: 920 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET SIHFZ40
SIHFZ40 Datasheet (PDF)
irfz40pbf sihfz40.pdf
IRFZ40, SiHFZ40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028 Fast SwitchingQg (Max.) (nC) 67 Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio
irfz40 sihfz40.pdf
IRFZ40, SiHFZ40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028 Fast SwitchingQg (Max.) (nC) 67 Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio
irfz48l irfz48s sihfz48l sihfz48s.pdf
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Surface Mount (IRFZ48S, SiHFZ48S)Qg (Max.) (nC) 110 Low-Profile Through-Hole (IRFZ48L, SiHFZ48L)Qgs (nC) 29 175 C Operating TemperatureQgd (nC)
irfz44l irfz44s irfz44spbf sihfz44l sihfz44s.pdf
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S
irfz44s irfz44l sihfz44s sihfz44l.pdf
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S
irfz48 irfz48pbf sihfz48.pdf
IRFZ48, SiHFZ48Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.018 RoHS* Ultra Low On-ResistanceCOMPLIANTQg (Max.) (nC) 110 Very Low Thermal ResistanceQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Fast SwitchingConfiguration Single E
irfz48r sihfz48r.pdf
IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH
irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si
irfz48r irfz48rpbf sihfz48r.pdf
IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH
irfz44r sihfz44r.pdf
IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the
irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si
irfz44r irfz44rpbf sihfz44r.pdf
IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the
irfz44 sihfz44.pdf
IRFZ44, SiHFZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028RoHS* Fast SwitchingQg (Max.) (nC) 67COMPLIANT Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfz44pbf sihfz44.pdf
IRFZ44, SiHFZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028RoHS* Fast SwitchingQg (Max.) (nC) 67COMPLIANT Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
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