SIHFZ44L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFZ44L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 67 nC
trⓘ - Tiempo de subida: 110 nS
Cossⓘ - Capacitancia de salida: 920 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: TO-262
SIHFZ44L Datasheet (PDF)
irfz44l irfz44s irfz44spbf sihfz44l sihfz44s.pdf

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S
irfz44s irfz44l sihfz44s sihfz44l.pdf

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S
irfz44r sihfz44r.pdf

IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the
irfz44r irfz44rpbf sihfz44r.pdf

IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: TK11Q65W
History: TK11Q65W



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