SIHFZ48RL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFZ48RL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 190 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 250 nS

Cossⓘ - Capacitancia de salida: 1300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: TO-262

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SIHFZ48RL datasheet

 ..1. Size:228K  vishay
irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf pdf_icon

SIHFZ48RL

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Si

 ..2. Size:203K  vishay
irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf pdf_icon

SIHFZ48RL

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Si

 6.1. Size:1059K  vishay
irfz48r sihfz48r.pdf pdf_icon

SIHFZ48RL

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 175 C Operating Temperature Fast Switching Qgs (nC) 29 Fully Avalanche Rated Qgd (nC) 36 Drop in Replacement of the SiH

 6.2. Size:1061K  vishay
irfz48r irfz48rpbf sihfz48r.pdf pdf_icon

SIHFZ48RL

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 175 C Operating Temperature Fast Switching Qgs (nC) 29 Fully Avalanche Rated Qgd (nC) 36 Drop in Replacement of the SiH

Otros transistores... SIHFZ40, SIHFZ44, SIHFZ44L, SIHFZ44R, SIHFZ44S, SIHFZ48, SIHFZ48L, SIHFZ48R, IRF1010E, SIHFZ48RS, SIHFZ48S, SIHG14N50D, SIHG16N50C, SIHG17N60D, SIHG20N50C, SIHG20N50E, SIHG22N50D