SIHFZ48S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFZ48S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 190 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 250 nS

Cossⓘ - Capacitancia de salida: 1300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: TO-263

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SIHFZ48S datasheet

 ..1. Size:377K  vishay
 irfz48l irfz48s sihfz48l sihfz48s.pdf pdf_icon

SIHFZ48S

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.018 Surface Mount (IRFZ48S, SiHFZ48S) Qg (Max.) (nC) 110 Low-Profile Through-Hole (IRFZ48L, SiHFZ48L) Qgs (nC) 29 175 C Operating Temperature Qgd (nC)

 7.1. Size:1517K  vishay
 irfz48 irfz48pbf sihfz48.pdf pdf_icon

SIHFZ48S

IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.018 RoHS* Ultra Low On-Resistance COMPLIANT Qg (Max.) (nC) 110 Very Low Thermal Resistance Qgs (nC) 29 175 C Operating Temperature Qgd (nC) 36 Fast Switching Configuration Single E

 7.2. Size:1059K  vishay
 irfz48r sihfz48r.pdf pdf_icon

SIHFZ48S

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 175 C Operating Temperature Fast Switching Qgs (nC) 29 Fully Avalanche Rated Qgd (nC) 36 Drop in Replacement of the SiH

 7.3. Size:228K  vishay
 irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf pdf_icon

SIHFZ48S

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Si

MOSTRAR MÁS

Otros transistores... SIHFZ44L, SIHFZ44R, SIHFZ44S, SIHFZ48, SIHFZ48L, SIHFZ48R, SIHFZ48RL, SIHFZ48RS, AON6380, SIHG14N50D, SIHG16N50C, SIHG17N60D, SIHG20N50C, SIHG20N50E, SIHG22N50D, SIHG22N60E, SIHG22N60S