SIHG22N60S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHG22N60S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 68 nS

Cossⓘ - Capacitancia de salida: 1480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO-247AC

 Búsqueda de reemplazo de SIHG22N60S MOSFET

- Selecciónⓘ de transistores por parámetros

 

SIHG22N60S datasheet

 ..1. Size:184K  vishay
 sihg22n60s.pdf pdf_icon

SIHG22N60S

SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation one VDS at TJ max. (V) 650 High EAR capability RDS(on) max. at 25 C ( ) VGS = 10 V 0.190 Lower figure-of-merit Ron x Qg Qg max. (nC) 98 100 % avalanche tested Qgs (nC) 17 Available Qgd (nC) 25 Ultra low Ron Configuration Single dV/dt ruggedness U

 5.1. Size:182K  vishay
 sihg22n60e.pdf pdf_icon

SIHG22N60S

SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 86 Ultra low gate charge (Qg) Qgs (nC) 11 Available Avalanche energy rated (UIS) Qgd (

 6.1. Size:185K  vishay
 sihg22n65e.pdf pdf_icon

SIHG22N60S

SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Available Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Availab

 7.1. Size:180K  vishay
 sihg22n50d.pdf pdf_icon

SIHG22N60S

SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.230 - Low Input Capacitance (Ciss) Qg max. (nC) 98 - Reduced Capacitive Switching Losses Qgs (nC) 13 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS)

MOSTRAR MÁS

Otros transistores... SIHFZ48S, SIHG14N50D, SIHG16N50C, SIHG17N60D, SIHG20N50C, SIHG20N50E, SIHG22N50D, SIHG22N60E, AO4407, SIHG22N65E, SIHG23N60E, SIHG24N65E, SIHG25N40D, SIHG25N50E, SIHG28N60EF, SIHG28N65E, SIHG30N60E