SIHG32N50D Todos los transistores

 

SIHG32N50D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHG32N50D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 390 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 225 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO-247AC
 

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SIHG32N50D Datasheet (PDF)

 ..1. Size:179K  vishay
 sihg32n50d.pdf pdf_icon

SIHG32N50D

SiHG32N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.150- Low Input Capacitance (Ciss)Qg max. (nC) 96- Reduced Capacitive Switching LossesQgs (nC) 18- High Body Diode RuggednessQgd (nC) 29- Avalanche Energy Rated (UIS)

 9.1. Size:176K  vishay
 sihg33n60ef.pdf pdf_icon

SIHG32N50D

SiHG33N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.098 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 155 Low input capacitance (Ciss)Qgs (nC) 22 Reduced s

 9.2. Size:147K  vishay
 sihg33n60e.pdf pdf_icon

SIHG32N50D

SiHG33N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM): Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.099 Reducted Switching and Conduction LossesQg (Max.) (nC) 150 Ultra Low Gate Charge (Qg)Qgs (nC) 24Qgd (nC) 42 Avalanche Energy Rated (UIS

 9.3. Size:177K  vishay
 sihg30n60e.pdf pdf_icon

SIHG32N50D

SiHG30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced switching and conduction lossesQg max. (nC) 130 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS) AvailableQgd (

MOSTRAR MÁS

Otros transistores... SIHG22N65E , SIHG23N60E , SIHG24N65E , SIHG25N40D , SIHG25N50E , SIHG28N60EF , SIHG28N65E , SIHG30N60E , IRFZ46N , SIHG33N60E , SIHG33N60EF , SIHG460B , SIHG47N60E , SIHG47N60EF , SIHG47N60S , SIHG47N65E , SIHG64N65E .

History: 1N65

 

 
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