SIHG33N60EF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHG33N60EF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 278 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 154 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.098 Ohm

Encapsulados: TO-247AC

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SIHG33N60EF datasheet

 ..1. Size:176K  vishay
 sihg33n60ef.pdf pdf_icon

SIHG33N60EF

SiHG33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRM RDS(on) max. at 25 C ( ) VGS = 10 V 0.098 Low figure-of-merit (FOM) Ron x Qg Qg (Max.) (nC) 155 Low input capacitance (Ciss) Qgs (nC) 22 Reduced s

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 sihg33n60e.pdf pdf_icon

SIHG33N60EF

SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.099 Reducted Switching and Conduction Losses Qg (Max.) (nC) 150 Ultra Low Gate Charge (Qg) Qgs (nC) 24 Qgd (nC) 42 Avalanche Energy Rated (UIS

 9.1. Size:179K  vishay
 sihg32n50d.pdf pdf_icon

SIHG33N60EF

SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.150 - Low Input Capacitance (Ciss) Qg max. (nC) 96 - Reduced Capacitive Switching Losses Qgs (nC) 18 - High Body Diode Ruggedness Qgd (nC) 29 - Avalanche Energy Rated (UIS)

 9.2. Size:177K  vishay
 sihg30n60e.pdf pdf_icon

SIHG33N60EF

SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.125 Reduced switching and conduction losses Qg max. (nC) 130 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Available Qgd (

MOSTRAR MÁS

Otros transistores... SIHG24N65E, SIHG25N40D, SIHG25N50E, SIHG28N60EF, SIHG28N65E, SIHG30N60E, SIHG32N50D, SIHG33N60E, 18N50, SIHG460B, SIHG47N60E, SIHG47N60EF, SIHG47N60S, SIHG47N65E, SIHG64N65E, SIHG73N60E, SIHH11N60E