SIHG33N60EF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIHG33N60EF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 278 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 103 nC
   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 154 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.098 Ohm
   Paquete / Cubierta: TO-247AC

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SIHG33N60EF Datasheet (PDF)

..1. Size:176K vishay
sihg33n60ef.pdf

SiHG33N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.098 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 155 Low input capacitance (Ciss)Qgs (nC) 22 Reduced s

4.1. Size:147K vishay
sihg33n60e.pdf

SiHG33N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM): Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.099 Reducted Switching and Conduction LossesQg (Max.) (nC) 150 Ultra Low Gate Charge (Qg)Qgs (nC) 24Qgd (nC) 42 Avalanche Energy Rated (UIS

9.1. Size:179K vishay
sihg32n50d.pdf

SiHG32N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.150- Low Input Capacitance (Ciss)Qg max. (nC) 96- Reduced Capacitive Switching LossesQgs (nC) 18- High Body Diode RuggednessQgd (nC) 29- Avalanche Energy Rated (UIS)

9.2. Size:177K vishay
sihg30n60e.pdf

SiHG30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced switching and conduction lossesQg max. (nC) 130 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS) AvailableQgd (

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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