IRLI2505 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLI2505
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 58 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 160 nS
Cossⓘ - Capacitancia de salida: 1100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de IRLI2505 MOSFET
IRLI2505 Datasheet (PDF)
irli2505.pdf

PD - 9.1327AIRLI2505HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008G Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche RatedID = 58ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techni
auirli2505.pdf

PD - 97766AUTOMOTIVE GRADEAUIRLI2505Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Logic-Level Gate Drivel Low On-ResistanceV(BR)DSS 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) max. 8.0ml Fast Switchingl Fully Avalanche RatedID 58Al Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*Des
irli2203g.pdf

PD - 9.1092AIRLI2203GHEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceVDSS = 30VIsolated PackageHigh Voltage Isolation = 2.5KVRMS RDS(on) = 0.010Sink to Lead Creepage Dist. = 4.8mmLogic-Level Gate DriveRDS(on) Specified at VGS=5.0V & 10V ID = 52ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techn
irli2910.pdf

PD - 9.1384BIRLI2910PRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Isolated PackageRDS(on) = 0.026 High Voltage Isolation = 2.5KVRMS G Sink to Lead Creepage Dist. = 4.8mmID = 31A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced p
Otros transistores... IRLBA3803P , 7N65L-TF3-T , IRLBL1304 , IRLD014 , IRLD024 , IRLD110 , IRLD120 , IRLI2203N , 5N50 , IRLI2910 , IRLI3705N , IRLI3803 , IRLI510A , IRLI520A , IRLI520N , IRLI530A , IRLI530N .
History: 2N6764 | FDP18N50 | SVSP60R033P7HD4 | WSP9936 | JMSH2010PC | FK7SM-12
History: 2N6764 | FDP18N50 | SVSP60R033P7HD4 | WSP9936 | JMSH2010PC | FK7SM-12



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMTK080P03A | JMTK068N07A | JMTK060P03A | JMTK060N06A | JMTK050P03A | JMTK035N04L | JMTK018N03A | JMTI60N04A | JMTI50N06B | JMTI320N10A | JMTI3005A | JMTI290N06A | JMTI210P02A | JMTI10N10A | JMTI080P03A | JMTI080N02A
Popular searches
oc44 datasheet | 2sa70 | 2sa706 | 2sc539 | 2n5401 transistor equivalent | p0903bdg | c1384 transistor | 2sc1175