IRLI2505 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLI2505

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 58 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 160 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220F

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IRLI2505 datasheet

 ..1. Size:103K  international rectifier
 irli2505.pdf pdf_icon

IRLI2505

PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008 G Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID = 58A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

 0.1. Size:242K  international rectifier
 auirli2505.pdf pdf_icon

IRLI2505

PD - 97766 AUTOMOTIVE GRADE AUIRLI2505 Features l Advanced Planar Technology HEXFET Power MOSFET l Logic-Level Gate Drive l Low On-Resistance V(BR)DSS 55V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) max. 8.0m l Fast Switching l Fully Avalanche Rated ID 58A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* Des

 9.1. Size:156K  international rectifier
 irli2203g.pdf pdf_icon

IRLI2505

PD - 9.1092A IRLI2203G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.010 Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive RDS(on) Specified at VGS=5.0V & 10V ID = 52A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techn

 9.2. Size:143K  international rectifier
 irli2910.pdf pdf_icon

IRLI2505

PD - 9.1384B IRLI2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Isolated Package RDS(on) = 0.026 High Voltage Isolation = 2.5KVRMS G Sink to Lead Creepage Dist. = 4.8mm ID = 31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

MOSTRAR MÁS

Otros transistores... IRLBA3803P, 7N65L-TF3-T, IRLBL1304, IRLD014, IRLD024, IRLD110, IRLD120, IRLI2203N, IRFP064N, IRLI2910, IRLI3705N, IRLI3803, IRLI510A, IRLI520A, IRLI520N, IRLI530A, IRLI530N