SIHL620S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHL620S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 5.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 91 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO-263
- Selección de transistores por parámetros
SIHL620S Datasheet (PDF)
irl620s sihl620s.pdf

IRL620S, SiHL620SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 200Available Available in Tape and ReelRDS(on) ()VGS = 10 V 0.80RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 16 Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Singl
irl620spbf sihl620s.pdf

IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
irl620s sihl620s 2.pdf

IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
irl620 sihl620.pdf

IRL620, SiHL620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.80 RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.7 Fast SwitchingQgd (nC) 9.6 Ease of parallelingConfiguration Single
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: KP746B | BL30N60-F | BUZ900P | MCH6412 | 2N60L-TF3-T | AOTF5N100 | RTU002P02
History: KP746B | BL30N60-F | BUZ900P | MCH6412 | 2N60L-TF3-T | AOTF5N100 | RTU002P02



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