IRLI3705N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 9.1369BIRLI3705NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.01 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 52ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremel

PD- 95427AIRLI3705NPbF Lead-Freewww.irf.com 110/27/04IRLI3705NPbF2 www.irf.comIRLI3705NPbFwww.irf.com 3IRLI3705NPbF4 www.irf.comIRLI3705NPbFwww.irf.com 5IRLI3705NPbF6 www.irf.comIRLI3705NPbFwww.irf.com 7IRLI3705NPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking InformationE XAMP L E : T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRLI3705FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

PD - 94390IRLI3615HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 150V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.085 Fast SwitchingG Fully Avalanche RatedID = 14A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance p

PD - _____IRLI3303PRELIMINARYHEXFET Power MOSFETLogic-Level Gate DriveAdvanced Process TechnologyVDSS = 30VIsolated PackageHigh Voltage Isolation = 2.5KVRMS RDS(on) = 0.026Sink to Lead Creepage Dist. = 4.8mmFully Avalanche RatedID = 25ADescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

PD - 9.1320BIRLI3803HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Ultra Low On-Resistance Isolated PackageRDS(on) = 0.006 High Voltage Isolation = 2.5KVRMS G Sink to Lead Creepage Dist. = 4.8mmID = 76A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

PD 9.1377IRLI3103PRELIMINARYHEXFET Power MOSFETLogic-Level Gate DriveAdvanced Process TechnologyVDSS = 30VIsolated PackageHigh Voltage Isolation = 2.5KVRMS RDS(on) = 0.014Sink to Lead Creepage Dist. = 4.8mmFully Avalanche RatedID = 38ADescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo

PD- 95642IRLI3803PbF Lead-Freewww.irf.com 17/26/04IRLI3803PbF2 www.irf.comIRLI3803PbFwww.irf.com 3IRLI3803PbF4 www.irf.comIRLI3803PbFwww.irf.com 5IRLI3803PbF6 www.irf.comIRLI3803PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+

IRLI3615Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.058 Low-Profile Through-HoleQg (Max.) (nC) 64 Available in Tape and ReelQgs (nC) 12 Dynamic dV/dt Rating 150 C Operating TemperatureQgd (nC) 30 Fast SwitchingConfi

IRLI3803Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004 at VGS = 10 V 9830 82 nC0.005 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220 FULLPAK D Server DC/DCGSSDGN-Channel MOSFETTop Vi