SIHL630S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHL630S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 74 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 57 nS
Cossⓘ - Capacitancia de salida: 220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de SIHL630S MOSFET
- Selecciónⓘ de transistores por parámetros
SIHL630S datasheet
..1. Size:218K vishay
irl630s sihl630s.pdf 
IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 5.5 Logic-Level Gate Drive Qgd (nC) 24 RDS(on) Specified at VGS = 4 V a
..2. Size:244K vishay
irl630spbf sihl630s.pdf
IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 5.5 Logic-Level Gate Drive Qgd (nC) 24 RDS(on) Specified at VGS = 4 V a
7.1. Size:2277K vishay
irl630 sihl630.pdf
IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5 V 0.40 RoHS* Logic Level Gate Drive COMPLIANT Qg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 5.5 150 C Operating Temperature Qgd (nC) 24 Fast Switching Configuration Sing
7.2. Size:2205K vishay
irl630pbf sihl630.pdf
IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5 V 0.40 RoHS* Logic Level Gate Drive COMPLIANT Qg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 5.5 150 C Operating Temperature Qgd (nC) 24 Fast Switching Configuration Sing
9.1. Size:1708K vishay
irl640pbf sihl640.pdf
IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si
9.2. Size:2134K vishay
irl620s sihl620s.pdf
IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount VDS (V) 200 Available Available in Tape and Reel RDS(on) ( )VGS = 10 V 0.80 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 16 Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 V Configuration Singl
9.3. Size:2119K vishay
irl620 sihl620.pdf
IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.80 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.7 Fast Switching Qgd (nC) 9.6 Ease of paralleling Configuration Single
9.4. Size:1464K vishay
irl620spbf sihl620s.pdf
IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
9.5. Size:915K vishay
irl640s sihl640s.pdf
IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.18 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.0 Logic-Level Gate Drive Qgd (nC) 38 RDS(on) Specified at VGS = 4 V a
9.6. Size:1705K vishay
irl640 sihl640.pdf
IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si
9.7. Size:917K vishay
sihl640s.pdf
IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.18 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.0 Logic-Level Gate Drive Qgd (nC) 38 RDS(on) Specified at VGS = 4 V a
9.8. Size:2122K vishay
irl620pbf sihl620.pdf
IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.80 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.7 Fast Switching Qgd (nC) 9.6 Ease of paralleling Configuration Single
9.9. Size:1439K vishay
irl620s sihl620s 2.pdf
IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
Otros transistores... SIHL520L, SIHL530, SIHL530S, SIHL540, SIHL540S, SIHL620, SIHL620S, SIHL630, EMB04N03H, SIHL640, SIHL640S, SIHLD014, SIHLD024, SIHLD110, SIHLD120, SIHLI520G, SIHLI530G
