IRLI3803 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLI3803

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 76 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 230 nS

Cossⓘ - Capacitancia de salida: 1800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO220F

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IRLI3803 datasheet

 ..1. Size:103K  international rectifier
 irli3803.pdf pdf_icon

IRLI3803

PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Ultra Low On-Resistance Isolated Package RDS(on) = 0.006 High Voltage Isolation = 2.5KVRMS G Sink to Lead Creepage Dist. = 4.8mm ID = 76A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech

 ..2. Size:1461K  international rectifier
 irli3803pbf.pdf pdf_icon

IRLI3803

PD- 95642 IRLI3803PbF Lead-Free www.irf.com 1 7/26/04 IRLI3803PbF 2 www.irf.com IRLI3803PbF www.irf.com 3 IRLI3803PbF 4 www.irf.com IRLI3803PbF www.irf.com 5 IRLI3803PbF 6 www.irf.com IRLI3803PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - +

 0.1. Size:852K  cn vbsemi
 irli3803p.pdf pdf_icon

IRLI3803

IRLI3803P www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.004 at VGS = 10 V 98 30 82 nC 0.005 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220 FULLPAK D Server DC/DC G S S D G N-Channel MOSFET Top Vi

 9.1. Size:107K  international rectifier
 irli3705n.pdf pdf_icon

IRLI3803

PD - 9.1369B IRLI3705N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.01 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 52A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremel

MOSTRAR MÁS

Otros transistores... IRLD014, IRLD024, IRLD110, IRLD120, IRLI2203N, IRLI2505, IRLI2910, IRLI3705N, IRFZ44N, IRLI510A, IRLI520A, IRLI520N, IRLI530A, IRLI530N, IRLI540A, IRLI540N, IRLI610A