SIHLIZ24G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHLIZ24G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 110 nS
Cossⓘ - Capacitancia de salida: 360 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: TO-220FP
Búsqueda de reemplazo de SIHLIZ24G MOSFET
- Selecciónⓘ de transistores por parámetros
SIHLIZ24G datasheet
sihliz24g.pdf
IRLIZ24G, SiHLIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 5.0 V 0.10 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 4.5 Logic-Level Gate Drive Qgd (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Fast
irliz34g sihliz34g.pdf
IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 Logic-Level Gate Drive Qgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V
irliz14g sihliz14g.pdf
IRLIZ14G, SiHLIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.20 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive Qgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 6.
irliz34gpbf sihliz34g.pdf
IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 Logic-Level Gate Drive Qgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V
Otros transistores... SIHLD120, SIHLI520G, SIHLI530G, SIHLI540G, SIHLI620G, SIHLI630G, SIHLI640G, SIHLIZ14G, IRF540N, SIHLIZ34G, SIHLIZ44G, SIHLL014, SIHLL110, SIHLR014, SIHLR024, SIHLR110, SIHLU014
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
2sa763 | a933 | 2sa818 replacement | irfb3607 datasheet | 2n2907 equivalent | c2026 | mpsa56 transistor equivalent | 13009 transistor
