IRLI520A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLI520A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 49 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9.2 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Paquete / Cubierta: TO262
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IRLI520A Datasheet (PDF)
irli520npbf.pdf
PD - 95049IRLI520NPbF Lead-Freewww.irf.com 12/25/04IRLI520NPbF2 www.irf.comIRLI520NPbFwww.irf.com 3IRLI520NPbF4 www.irf.comIRLI520NPbFwww.irf.com 5IRLI520NPbF6 www.irf.comIRLI520NPbFwww.irf.com 7IRLI520NPbF8 www.irf.comIRLI520NPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking Informat
irli520g.pdf
Document Number: 90397 www.vishay.com1379Document Number: 90397 www.vishay.com1380Document Number: 90397 www.vishay.com1381Document Number: 90397 www.vishay.com1382Document Number: 90397 www.vishay.com1383Document Number: 90397 www.vishay.com1384Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as
irli520n.pdf
PD - 9.1496AIRLI520NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.18 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID =8.1ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi
irli520g irli520gpbf sihli520g.pdf
IRLI520G, SiHLI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = 5 V 0.27RoHS* Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQg (Max.) (nC) 12 Logic-Level Gate DriveQgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 7.
irli520g sihli520g.pdf
IRLI520G, SiHLI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = 5 V 0.27RoHS* Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQg (Max.) (nC) 12 Logic-Level Gate DriveQgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 7.
irli520npbf.pdf
IRLI520NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.18 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 8.1A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te
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