IRLI610A Todos los transistores

 

IRLI610A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLI610A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 33 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 9 nS

Conductancia de drenaje-sustrato (Cd): 35 pF

Resistencia drenaje-fuente RDS(on): 1.5 Ohm

Empaquetado / Estuche: I2PAK

Búsqueda de reemplazo de MOSFET IRLI610A

 

 

IRLI610A Datasheet (PDF)

1.1. irlw610a irli610a.pdf Size:234K _upd

IRLI610A
IRLI610A

IRLW/I610A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology RDS(on) = 1.5Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 3.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK I2-PAK ♦ 150°C Operating Temperature 2 ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.) 1 1 2 3 3 1. Gate 2. Drain

5.1. irlw630a irli630a.pdf Size:226K _upd

IRLI610A
IRLI610A

IRLW/I630A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 9 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK I2-PAK ♦ 150°C Operating Temperature 2 ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3

5.2. irli620gpbf.pdf Size:1411K _upd

IRLI610A
IRLI610A

PD- 95753 IRLI620GPbF • Lead-Free www.irf.com 1 8/23/04 IRLI620GPbF 2 www.irf.com IRLI620GPbF www.irf.com 3 IRLI620GPbF 4 www.irf.com IRLI620GPbF www.irf.com 5 IRLI620GPbF 6 www.irf.com IRLI620GPbF www.irf.com 7 IRLI620GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information EXAMPLE: THIS IS AN IRFI8

 5.3. irli640gpbf.pdf Size:1708K _upd

IRLI610A
IRLI610A

IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 200 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5.0 V 0.18 f = 60 Hz) RoHS* COMPLIANT • Sink to Lead Creepage Dist. 4.8 mm Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4V and 5 V Qgd (nC) 38

5.4. irli630gpbf.pdf Size:1413K _upd

IRLI610A
IRLI610A

PD- 95653 IRLI630GPbF • Lead-Free www.irf.com 1 7/26/04 IRLI630GPbF 2 www.irf.com IRLI630GPbF www.irf.com 3 IRLI630GPbF 4 www.irf.com IRLI630GPbF www.irf.com 5 IRLI630GPbF 6 www.irf.com IRLI630GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - +

 5.5. irli620gpbf.pdf Size:1435K _international_rectifier

IRLI610A
IRLI610A

PD- 95753 IRLI620GPbF Lead-Free 8/23/04 Document Number: 91312 www.vishay.com 1 IRLI620GPbF Document Number: 91312 www.vishay.com 2 IRLI620GPbF Document Number: 91312 www.vishay.com 3 IRLI620GPbF Document Number: 91312 www.vishay.com 4 IRLI620GPbF Document Number: 91312 www.vishay.com 5 IRLI620GPbF Document Number: 91312 www.vishay.com 6 IRLI620GPbF Document Number: 9

5.6. irli630g.pdf Size:156K _international_rectifier

IRLI610A
IRLI610A

PD - 9.1236 IRLI630G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS = 200V Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(on) = 0.40? RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switc

5.7. irli640gpbf.pdf Size:1231K _international_rectifier

IRLI610A
IRLI610A

PD- 95654 IRLI640GPbF Lead-Free 7/26/04 Document Number: 91314 www.vishay.com 1 IRLI640GPbF Document Number: 91314 www.vishay.com 2 IRLI640GPbF Document Number: 91314 www.vishay.com 3 IRLI640GPbF Document Number: 91314 www.vishay.com 4 IRLI640GPbF Document Number: 91314 www.vishay.com 5 IRLI640GPbF Document Number: 91314 www.vishay.com 6 IRLI640GPbF Peak Diode Recover

5.8. irli630gpbf.pdf Size:1224K _international_rectifier

IRLI610A
IRLI610A

PD- 95653 IRLI630GPbF Lead-Free 7/26/04 Document Number: 91313 www.vishay.com 1 IRLI630GPbF Document Number: 91313 www.vishay.com 2 IRLI630GPbF Document Number: 91313 www.vishay.com 3 IRLI630GPbF Document Number: 91313 www.vishay.com 4 IRLI630GPbF Document Number: 91313 www.vishay.com 5 IRLI630GPbF Document Number: 91313 www.vishay.com 6 IRLI630GPbF Peak Diode Recover

5.9. irli640g.pdf Size:153K _international_rectifier

IRLI610A
IRLI610A

PD - 9.1237 IRLI640G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS = 200V Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(on) = 0.18? RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling ID = 9.9A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switc

5.10. irli620g.pdf Size:157K _international_rectifier

IRLI610A
IRLI610A

PD - 9.1235 IRLI620G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS = 200V Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(on) = 0.80? RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling ID = 4.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switc

5.11. irli620g sihli620g.pdf Size:1895K _vishay

IRLI610A
IRLI610A

IRLI620G, SiHLI620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) (?)VGS = 5.0 V 0.80 f = 60 Hz) RoHS* Qg (Max.) (nC) 16 COMPLIANT Sink to Lead Creepage Dist. 4.8 mm Qgs (nC) 2.7 Logic-Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4V and 5 V Fast Switching

5.12. irli640g sihli640g.pdf Size:1706K _vishay

IRLI610A
IRLI610A

IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 5.0 V 0.18 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. 4.8 mm Qg (Max.) (nC) 66 Logic-Level Gate Drive Qgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 V Qgd (nC) 38 Fast Switching

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

Back to Top

 


IRLI610A
  IRLI610A
  IRLI610A
  IRLI610A
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: QS8M51 | QS8M13 | QS8M11 | QS8K21 | QS8K2 | QS8K13 | QS8K11 | QS8J5 | QS8J4 | QS8J2 | QS8J13 | QS8J12 | QS8J11 | QS8F2 | QS6U24 |

 

 

Back to Top