FMI16N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FMI16N60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 270 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm

Encapsulados: T-PACK-L

 Búsqueda de reemplazo de FMI16N60E MOSFET

- Selecciónⓘ de transistores por parámetros

 

FMI16N60E datasheet

 ..1. Size:474K  fuji
 fmi16n60e.pdf pdf_icon

FMI16N60E

FMI16N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

 0.1. Size:523K  fuji
 fmi16n60es.pdf pdf_icon

FMI16N60E

FMI16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5

 8.1. Size:482K  fuji
 fmi16n50es.pdf pdf_icon

FMI16N60E

FMI16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.

 8.2. Size:364K  fuji
 fmi16n50e.pdf pdf_icon

FMI16N60E

FMI16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

MOSTRAR MÁS

Otros transistores... FMI11N60E, FMI12N50E, FMI12N50ES, FMI12N60ES, FMI13N60E, FMI13N60ES, FMI16N50E, FMI16N50ES, IRF630, FMI16N60ES, FMI20N50E, FMI20N50ES, FMI80N10T2, FML12N50ES, FML12N60ES, FML13N60ES, FML16N50ES