FMI16N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FMI16N60E Datasheet (PDF)

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FMI16N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

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FMI16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5

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FMI16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack (L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.

8.2. Size:364K fuji
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FMI16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Otros transistores... FMI11N60E , FMI12N50E , FMI12N50ES , FMI12N60ES , FMI13N60E , FMI13N60ES , FMI16N50E , FMI16N50ES , IRF9540 , FMI16N60ES , FMI20N50E , FMI20N50ES , FMI80N10T2 , FML12N50ES , FML12N60ES , FML13N60ES , FML16N50ES .