FS50UM-3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FS50UM-3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 155 nS

Cossⓘ - Capacitancia de salida: 860 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm

Encapsulados: TO-220

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FS50UM-3 datasheet

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FS50UM-3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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FS50UM-3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FS50UM-3 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM

 8.1. Size:192K  renesas
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FS50UM-3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... FS50KM-2, FS50KM-3, FS50KMJ-03F, FS50KMJ-06F, FS50KMJ-2, FS50KMJ-3, FS50SM-3, FS50SMJ-3, 7N60, FS50UMJ-3, FS50VS-3, FS50VSJ-2, FS50VSJ-3, FS5AS-06, FS5AS-2, FS5AS-3, FS5ASJ-06F