FS50VS-3 Todos los transistores

 

FS50VS-3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FS50VS-3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 155 nS

Conductancia de drenaje-sustrato (Cd): 860 pF

Resistencia drenaje-fuente RDS(on): 0.031 Ohm

Empaquetado / Estuche: TO-220S

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FS50VS-3 Datasheet (PDF)

1.1. fs50vs-3.pdf Size:199K _upd-mosfet

FS50VS-3
FS50VS-3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.1. fs50vsj-3.pdf Size:200K _upd-mosfet

FS50VS-3
FS50VS-3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. fs50vsj-2.pdf Size:192K _upd-mosfet

FS50VS-3
FS50VS-3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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