2SJ328 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ328
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de la puerta (Qg): 85 nC
Tiempo de subida (tr): 180 nS
Conductancia de drenaje-sustrato (Cd): 1100 pF
Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET 2SJ328
2SJ328 Datasheet (PDF)
2sj320.pdf
Ordering number:EN4615AP-Channel Silicon MOSFET2SJ320Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ320] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO
2sj324-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj327.pdf
2SJ327www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.010 at VGS = - 10 V 55RoHS*- 40COMPLIANT0.014 at VGS = - 4.5 V 54TO-251SGG D SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitGat
Otros transistores... 2SJ218 , 2SJ243 , 2SJ302 , 2SJ303 , 2SJ324 , 2SJ325 , 2SJ326 , 2SJ327 , AO4407 , 2SJ329 , 2SJ330 , 2SJ331 , 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 .
