IRF8714GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF8714GPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.9 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET IRF8714GPBF
IRF8714GPBF Datasheet (PDF)
irf8714gpbf.pdf
PD - 96263IRF8714GPbFApplicationsHEXFET Power MOSFETl Control MOSFET of Sync-BuckVDSS RDS(on) maxQgConverters used for NotebookProcessor Power8.7m @VGS = 10V30V 8.1nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsAAl Very Low Gate Charge1 8S Dl Very Low RDS(on) at 4.5V VGS2 7S Dl Ultra-Low Gate Impedance3 6S Dl Full
irf8714pbf.pdf
PD - 96116IRF8714PbFApplicationsHEXFET Power MOSFETl Control MOSFET of Sync-BuckVDSS RDS(on) maxQgConverters used for NotebookProcessor Power8.7m @VGS = 10V30V 8.1nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsAA1 8l Very Low Gate ChargeS Dl Very Low RDS(on) at 4.5V VGS 2 7S Dl Ultra-Low Gate Impedance3 6S Dl Fully
irf8714pbf-1.pdf
IRF8714PbF-1HEXFET Power MOSFETVDS 30 VAA1 8S DRDS(on) max 8.7 m2 7(@V = 10V) S DGSQg (typical) 8.1 nC 3 6S DID 4 514 A G D(@T = 25C)ASO-8Top ViewApplicationsl Control MOSFET of Sync-Buck Converters used for Notebook Processor Powerl Control MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinout
irf8714pbf.pdf
PD - 96116IRF8714PbFApplicationsHEXFET Power MOSFETl Control MOSFET of Sync-BuckVDSS RDS(on) maxQgConverters used for NotebookProcessor Power8.7m @VGS = 10V30V 8.1nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsAA1 8l Very Low Gate ChargeS Dl Very Low RDS(on) at 4.5V VGS 2 7S Dl Ultra-Low Gate Impedance3 6S Dl Fully
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918