IRF8788PBF Todos los transistores

 

IRF8788PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF8788PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 980 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: SO-8
 

 Búsqueda de reemplazo de IRF8788PBF MOSFET

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Principales características: IRF8788PBF

 ..1. Size:227K  international rectifier
irf8788pbf.pdf pdf_icon

IRF8788PBF

PD - 97137A IRF8788PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power 30V 2.8m l Synchronous Rectifier MOSFET for @VGS = 10V 44nC Isolated DC-DC Converters Benefits A A l Very Low Gate Charge 1 8 S D l Very Low RDS(on) at 4.5V VGS 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Fully Characterized Avalanche Voltage 4

 0.1. Size:219K  international rectifier
irf8788pbf-1.pdf pdf_icon

IRF8788PBF

IRF8788PbF-1 HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 2.8 2 7 S D (@V = 10V) GS m RDS(on) max 3 6 S D 3.8 (@V = 4.5V) GS 4 5 G D Qg (typical) 44 nC SO-8 ID Top View 24 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS

 9.1. Size:497K  international rectifier
auirf8736m2tr.pdf pdf_icon

IRF8788PBF

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

 9.2. Size:250K  international rectifier
irf8714pbf.pdf pdf_icon

IRF8788PBF

PD - 96116 IRF8714PbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 8.7m @VGS = 10V 30V 8.1nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits A A 1 8 l Very Low Gate Charge S D l Very Low RDS(on) at 4.5V VGS 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Fully

Otros transistores... IRF8714PBF , IRF8714PBF-1 , IRF8721GPBF , IRF8721PBF , IRF8721PBF-1 , IRF8734PBF , IRF8736PBF , IRF8736PBF-1 , AO4468 , IRF8788PBF-1 , IRF8852PBF , IRF8910GPBF , IRF8910PBF-1 , IRF9130SMD , IRF9130SMD05 , IRF9310PBF , IRF9310PBF-1 .

History: IXFH120N25T

 

 
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