IRLL2703 Todos los transistores

 

IRLL2703 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLL2703
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT223
 

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IRLL2703 Datasheet (PDF)

 ..1. Size:138K  international rectifier
 irll2703pbf.pdf pdf_icon

IRLL2703

PD - 95337IRLL2703PBFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.045l Fully Avalanche RatedGl Lead-FreeID = 3.9ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist

 ..2. Size:113K  international rectifier
 irll2703.pdf pdf_icon

IRLL2703

PD - 91894IRLL2703HEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 30V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.045 Fast SwitchingG Fully Avalanche RatedID = 3.9ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.

 7.1. Size:246K  international rectifier
 auirll2705.pdf pdf_icon

IRLL2703

AUTOMOTIVE GRADEAUIRLL2705FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-Resistance V(BR)DSS55Vl Logic Level Gate DriveRDS(on) max.l Dynamic dv/dt Rating 0.04Gl 150C Operating TemperatureSID3.8Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified*S

 7.2. Size:160K  international rectifier
 irll2705.pdf pdf_icon

IRLL2703

PD- 91380BIRLL2705HEXFET Power MOSFET Surface MountD Dynamic dv/dt RatingVDSS = 55V Logic-Level Gate Drive Fast SwitchingRDS(on) = 0.04 Ease of ParallelingG Advanced Process TechnologyID = 3.8A Ultra Low On-ResistanceSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist

MOSTRAR MÁS

Otros transistores... IRLIZ34N , IRLIZ44A , IRLIZ44G , IRLIZ44N , IRLL014 , IRLL014N , IRLL024N , IRLL110 , IRFP260 , IRLL2705 , IRLL3303 , IRLM014A , IRLM110A , IRLM120A , IRLM210A , IRLM220A , IRLML2402 .

History: ZVN4206GVTA

 

 
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