IRF9321PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95960IRF9321PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 7.2 m(@VGS = -10V)RDS(on) max 11.2 m(@VGS = -4.5V)Qg (typical)34 nCSO-8ID -15 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsFeatures Resulting BenefitsIndustry-Standard SO-8 Package results in Multi-Vendor Compatibility

PD - 97518IRF9328PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 11.9 m(@VGS = -10V)RDS(on) max 19.7 m(@VGS = -4.5V)Qg (typical)18 nCSO-8ID -12 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesIndustry-Standard SO8 Package Multi-Vendor CompatibilityRoHS Compli

PD - 97465IRF9317PbFHEXFET Power MOSFETVDS-30 VS 18 DRDS(on) max 6.6 mS 27 D(@VGS = -10V)RDS(on) max S 3 6 D10.2 m(@VGS = -4.5V)G 4 5 DQg (typical)31 nCSO-8ID -16 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesIndustry-Standard SO8 Package Multi-Vendor

PD - 97521IRF9388PbFHEXFET Power MOSFETVDS-30 VVGS max 25 VRDS(on) max 11.9 m(@VGS = -10V) ID -12 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsResulting BenefitsFeatures25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityEnvironmentally FriendlierRoHS Compliant

IRF9310PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max S 18 D4.6(@V = -10V)GSmS 27 DRDS(on) max 6.8(@V = -4.5V)GSS 3 6 DQg (typical) 58 nCG 4 5 DID -20 ASO-8(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halo

PD - 96311AIRF9335PbFHEXFET Power MOSFETVDS-30 VS 18 DRDS(on) max 59 mS 27 D(@VGS = -10V)S 3 6 DRDS(on) max 110 m(@VGS = -4.5V)G 4 5 DQg (typical)9.1 nCSO-8ID -5.4 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsIndustry-S

PD - 97616IRF9358PbFHEXFET Power MOSFETVDS-30 VS2 1 8 D2DRDS(on) max 16.3 mG 2 7 D22(@VGS = -10V)RDS(on) max S1 3 6 D1D23.8 m(@VGS = -4.5V)G 4 5 D11Qg (typical)19 nCSO-8ID -9.2 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsFeatures Resulting BenefitsIndustry-Standa

PD - 96312AIRF9362PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 21.0 m (@VGS = -10V)RDS(on) max 32.0 m(@VGS = -4.5V) Qg (typical)13 nCSO-8Top ViewID -8.0 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsFeatures Resulting BenefitsIndustry-Standard SO-8 Package results in Multi-Vendor

PD - 97522AIRF9393PbFHEXFET Power MOSFETVDS-30 VS 18 DVGS max 25 VS 27 DRDS(on) max 19.4 m(@VGS = -10V) S 3 6 DID G 4 5 D-9.2 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsResulting BenefitsFeatures25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityEnvironm

IRF9389PbFHEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8S1 D1VDS 30 -30 V2 7G1 D1RDS(on) max 27 64 m3 6S2 D2Qg (typical) 6.8 8.1 nC 4 5G2 D2P-CHANNEL MOSFETID Top ViewSO-86.8 -4.6 A(@TA = 25C)Applicationsl High and Low Side Switches for Inverterl High and Low Side Switches for Generic Half-BridgeFeatures BenefitsHigh and low-side MOSFETs i

PD - 97571IRF9392PbFHEXFET Power MOSFETVDS-30 VVGS max25 VRDS(on) max 17.5 m(@VGS = -10V)ID -9.8 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsFeatures Resulting Benefits25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityRoHS Compliant Containing no Lead, no Bromi

IRF9389PbFHEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8S1 D1VDS 30 -30 V2 7G1 D1RDS(on) max 27 64 m3 6S2 D2Qg (typical) 6.8 8.1 nC 4 5G2 D2P-CHANNEL MOSFETID Top ViewSO-86.8 -4.6 A(@TA = 25C)Applicationsl High and Low Side Switches for Inverterl High and Low Side Switches for Generic Half-BridgeFeatures BenefitsHigh and low-side MOSFETs i

PD - 97523IRF9333PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 19.4 m(@VGS = -10V) RDS(on) max 32.5 m(@VGS = -4.5V)Qg (typical)14 nCSO-8ID -9.2 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesIndustry-Standard SO8 Package Multi-Vendor CompatibilityRoHS Complian

PD - 97561IRF9332PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 17.5 m(@VGS = -10V)RDS(on) max 28.1 m(@VGS = -4.5V)Qg (typical)14 nCSO-8ID -9.8 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsIndustry-Standard SO-8 Package results in M

IRF9395MPbFDirectFET dual P-Channel Power MOSFET Typical values (unless otherwise specified)VDSS VGS RDS(on) RDS(on) -30V max 20V max 5.3m@-10V 9.0m@-4.5VApplicationsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Isolation Switch for Input Power or Battery Application32nC 15nC 3.2nC 62nC 23nC -1.8VFeatures and BenefitsQ1-Q2l Environmentaly Friendly ProductG Gl RoHs Com

IRF9383MPbFDirectFET P-Channel Power MOSFET Typical values (unless otherwise specified)Applicationsl Isolation Switch for Input Power or Battery Application VDSS VGS RDS(on) RDS(on) l High Side Switch for Inverter Applications-30V max 20V max 2.3m@-10V 3.8m@-4.5VQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits67nC 29nC 9.4nC 315nC 59nC -1.8Vl Environmentaly

PD - 97437AIRF9310PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 4.6 m(@VGS = 10V)ID -20 A(@TA = 25C)SO-8Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesLow RDSon ( 4.6m) Lower Conduction Lossesresults in Industry-Standard SO8 Package Multi-Vendor CompatibilityRoHS

IRF9317TRP-Channel 30 V (D-S) MOSFETDescription This P-Channel MOSFET uses advanced trench technology and D design to provide excellent RDS(on) with low gate charge. D D It can be used in a wide variety of applications. D S1S S Features G 1) VDS=-30V,ID=-15A,RDS(ON)

IRF9335TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5D

IRF9389TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG

IRF9332TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PC

IRF9310TRPBF&-9www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2