IRF9333PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9333PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 44 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0194 Ohm

Encapsulados: SO-8

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IRF9333PBF datasheet

 ..1. Size:312K  international rectifier
 irf9333pbf.pdf pdf_icon

IRF9333PBF

PD - 97523 IRF9333PbF HEXFET Power MOSFET VDS -30 V RDS(on) max 19.4 m (@VGS = -10V) RDS(on) max 32.5 m (@VGS = -4.5V) Qg (typical) 14 nC SO-8 ID -9.2 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits Features Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Complian

 8.1. Size:266K  international rectifier
 irf9335pbf.pdf pdf_icon

IRF9333PBF

PD - 96311A IRF9335PbF HEXFET Power MOSFET VDS -30 V S 18 D RDS(on) max 59 m S 27 D (@VGS = -10V) S 3 6 D RDS(on) max 110 m (@VGS = -4.5V) G 4 5 D Qg (typical) 9.1 nC SO-8 ID -5.4 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Features and Benefits Features Resulting Benefits Industry-S

 8.2. Size:283K  international rectifier
 irf9332pbf.pdf pdf_icon

IRF9333PBF

PD - 97561 IRF9332PbF HEXFET Power MOSFET VDS -30 V RDS(on) max 17.5 m (@VGS = -10V) RDS(on) max 28.1 m (@VGS = -4.5V) Qg (typical) 14 nC SO-8 ID -9.8 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package results in M

 8.3. Size:844K  cn vbsemi
 irf9335trpbf.pdf pdf_icon

IRF9333PBF

IRF9335TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D

MOSTRAR MÁS

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