IRF9335PBF Todos los transistores

 

IRF9335PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF9335PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 94 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.059 Ohm
   Paquete / Cubierta: SO-8
 

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IRF9335PBF Datasheet (PDF)

 ..1. Size:266K  international rectifier
irf9335pbf.pdf pdf_icon

IRF9335PBF

PD - 96311AIRF9335PbFHEXFET Power MOSFETVDS-30 VS 18 DRDS(on) max 59 mS 27 D(@VGS = -10V)S 3 6 DRDS(on) max 110 m(@VGS = -4.5V)G 4 5 DQg (typical)9.1 nCSO-8ID -5.4 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsIndustry-S

 7.1. Size:844K  cn vbsemi
irf9335trpbf.pdf pdf_icon

IRF9335PBF

IRF9335TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5D

 8.1. Size:312K  international rectifier
irf9333pbf.pdf pdf_icon

IRF9335PBF

PD - 97523IRF9333PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 19.4 m(@VGS = -10V) RDS(on) max 32.5 m(@VGS = -4.5V)Qg (typical)14 nCSO-8ID -9.2 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery ApplicationFeatures and BenefitsResulting BenefitsFeaturesIndustry-Standard SO8 Package Multi-Vendor CompatibilityRoHS Complian

 8.2. Size:283K  international rectifier
irf9332pbf.pdf pdf_icon

IRF9335PBF

PD - 97561IRF9332PbFHEXFET Power MOSFETVDS-30 VRDS(on) max 17.5 m(@VGS = -10V)RDS(on) max 28.1 m(@VGS = -4.5V)Qg (typical)14 nCSO-8ID -9.8 A(@TA = 25C)Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsIndustry-Standard SO-8 Package results in M

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History: AOD256 | HFP840 | IRCZ34 | STP310N10F7 | AOD254 | ASDM3400ZB | HPW750N20SPA

 

 
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