SSM2030SD Datasheet. Equivalente

 ..1. Size:466K  silicon standard
 ssm2030sd.pdf

SSM2030SD N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 N-ch BV 20V DSS D2 D1 Low on-resistance R 60m DS(ON) D1 Fast switching I 2.6A D P-ch BVDSS -20V G2 S2 PDIP-8 G1 RDS(ON) 80m S1 Description ID -2.3A Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, Vin Vout ruggedized device design,

 7.1. Size:555K  silicon standard
 ssm2030gm.pdf

SSM2030GM N- and P-channel Enhancement-mode Power MOSFETs N-CH BVDSS 20V Simple drive requirement D2 D2 D2 RDS(ON) 30m Lower gate charge D1 D1 D1 D1 ID 6A Fast switching characteristics G2 G2 P-CH BVDSS -20V Pb-free; RoHS compliant. S2 S2 G1 SO-8 S1G1 RDS(ON) 50m S1 DESCRIPTION ID -5A Advanced Power MOSFETs from Silicon Standard provide the D2 D1 designer wit

 9.1. Size:319K  silicon standard
 ssm20p02gh ssm20p02gj.pdf

SSM20P02H,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement D BVDSS -20V 2.5V gate drive capability RDS(ON) 52m Fast switching ID -18A G S Description Power MOSFETs from Silicon Standard provide the G D designer with the best combination of fast switching, S TO-252(H) ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is wi

 9.2. Size:717K  silicon standard
 ssm20g45egh.pdf

SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY DESCRIPTION The SSM20G45E acheives fast switching performance V 450V CES with low gate charge without a complex drive circuit. It is VCE(sat) 5V typ. suitable for use in short-duration, high-current strobe applications, such as still-camera flash. I 130A CP The SSM20G45EGH is in a TO-252 package, which is

 9.3. Size:321K  silicon standard
 ssm20n03s.pdf

SSM20N03S,P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating BVDSS 30V D Repetitive-avalanche rated RDS(ON) 52m Fast switching ID 20A G Simple drive requirement S Description Power MOSFETs from Silicon Standard provide the G D designer with the best combination of fast switching, S TO-263 ruggedized device design, low on-resistance and cost-effectiveness. The TO-

 9.4. Size:717K  silicon standard
 ssm20g45egj.pdf

SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY DESCRIPTION The SSM20G45E acheives fast switching performance V 450V CES with low gate charge without a complex drive circuit. It is VCE(sat) 5V typ. suitable for use in short-duration, high-current strobe applications, such as still-camera flash. I 130A CP The SSM20G45EGH is in a TO-252 package, which is