SSM20N03S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSM20N03S,PN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETDynamic dv/dt rating BVDSS 30VDRepetitive-avalanche rated RDS(ON) 52m Fast switching ID 20AGSimple drive requirementSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,S TO-263ruggedized device design, low on-resistance and cost-effectiveness.The TO-

SSM20P02H,JP-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple drive requirement D BVDSS -20V2.5V gate drive capability RDS(ON) 52m Fast switching ID -18AGSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, low on-resistance and cost-effectiveness.The TO-252 package is wi

SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is

SSM2030GMN- and P-channel Enhancement-mode Power MOSFETsN-CH BVDSS 20VSimple drive requirement D2D2D2 RDS(ON) 30mLower gate charge D1D1D1D1ID 6AFast switching characteristicsG2G2P-CH BVDSS -20VPb-free; RoHS compliant. S2S2 G1SO-8 S1G1RDS(ON) 50mS1 DESCRIPTIONID -5AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer wit

SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is

SSM2030SDN AND P-CHANNELENHANCEMENT-MODE POWER MOSFETSSimple drive requirement D2 N-ch BV 20VDSSD2D1Low on-resistance R 60mDS(ON)D1Fast switching I 2.6ADP-ch BVDSS -20VG2S2PDIP-8G1 RDS(ON) 80mS1Description ID -2.3APower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,VinVoutruggedized device design,