SSM20N03S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM20N03S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Paquete / Cubierta: TO-263
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SSM20N03S Datasheet (PDF)
ssm20n03s.pdf

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SSM20P02H,JP-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple drive requirement D BVDSS -20V2.5V gate drive capability RDS(ON) 52m Fast switching ID -18AGSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, low on-resistance and cost-effectiveness.The TO-252 package is wi
ssm20g45egh.pdf

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ssm2030gm.pdf

SSM2030GMN- and P-channel Enhancement-mode Power MOSFETsN-CH BVDSS 20VSimple drive requirement D2D2D2 RDS(ON) 30mLower gate charge D1D1D1D1ID 6AFast switching characteristicsG2G2P-CH BVDSS -20VPb-free; RoHS compliant. S2S2 G1SO-8 S1G1RDS(ON) 50mS1 DESCRIPTIONID -5AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer wit
Otros transistores... SSM04N70BGF-H , SSM04N70BGP-A , SSM09N70GP-A , SSM09N90CGW , SSM09N90GW , SSM1333GU , SSM2030GM , SSM2030SD , IRFP250 , SSM20P02GH , SSM20P02GJ , SSM2301GN , SSM2302GN , SSM2303GN , SSM2304AGN , SSM2304GN , SSM2305AGN .
History: CHM25N15LPAGP | 14N50G-TQ2-T | AP80T10GP-HF
History: CHM25N15LPAGP | 14N50G-TQ2-T | AP80T10GP-HF



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