SSM3K318R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM3K318R
Código: KDX
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 2.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.8 V
Carga de la puerta (Qg): 7 nC
Conductancia de drenaje-sustrato (Cd): 31 pF
Resistencia entre drenaje y fuente RDS(on): 0.107 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SSM3K318R
SSM3K318R Datasheet (PDF)
ssm3k318r.pdf
SSM3K318RMOSFETs Silicon N-Channel MOSSSM3K318RSSM3K318RSSM3K318RSSM3K318R1. Applications1. Applications1. Applications1. Applications Load Switches Ultra-High-Speed Switching2. Features2. Features2. Features2. Features(1) 4.5-V gate drive voltage.(2) Low drain-source on-resistance RDS(ON) = 145 m (max) (@VGS = 4.5 V) RDS(ON) = 107 m (max) (@VGS
ssm3k318t.pdf
SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K318T Load Switching Applications High-Speed Switching Applications Unit: mm+0.2 4.5 V drive 2.8-0.3 Low ON-resistance : RDS(ON) = 145 m (max) (@VGS = 4.5 V) +0.21.6-0.1: RDS(ON) = 107 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Sy
ssm3k315t.pdf
SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K315T High-Speed Switching Applications Unit: mm 4.5-V drive +0.2 Low ON-resistance : Ron = 41.5 m (max) (@VGS = 4.5 V) 2.8-0.3: Ron = 27.6 m (max) (@VGS = 10 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Source
ssm3k310t.pdf
SSM3K310T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K310T High-Speed Switching Applications 1.5 V drive Unit: mm Low ON-resistance: Ron = 66 m (max) (@VGS = 1.5 V) +0.22.8-0.3Ron = 43 m (max) (@VGS = 1.8 V) +0.2Ron = 32 m (max) (@VGS = 2.5 V) 1.6-0.1Ron = 28 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C)
ssm3k311t.pdf
SSM3K311T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K311T High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 43m (max) (@VGS = 4V) +0.22.8-0.3 : Ron = 32m (max) (@VGS = 10V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 30 VGat
ssm3k316t.pdf
SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 131 m (max) (@VGS = 1.8 V) Ron = 87 m (max) (@VGS = 2.5 V) Ron = 65 m (max) (@VGS = 4.5 V) Ron = 53 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Ch
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History: AON7788
